256kx1
Abstract: 22A16 EDI81257CB A710C 256Kx1 bit A34C
Text: ^EDI EDI81257CB Electronic Design» Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL
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EDI81257CB
256Kx1
EDI81257CB
MIL-STD-883,
A0VCCA17
A0-A17
22A16
A710C
256Kx1 bit
A34C
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256kx1
Abstract: SRAM flatpack EDI81257CB AL624 wv-ss 8A79
Text: EDI81257CB ^EDI Electronic D*lgn» inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic M WM E 0iF©MM1]©i Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL
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OCR Scan
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EDI81257CB
256Kx1
EDI81257CB
MIL-STD-883,
A0-A17
A0VCCA17
SRAM flatpack
AL624
wv-ss
8A79
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI81257CB Electronic D*$lgnt Inc. High Speed 256K Monolithic SRAM M WM E 0iF©MM1]©i 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB Is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each, inputs and outputs are TTL
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EDI81257CB
256Kx1
EDI81257CB
EDIB1257CB
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uln buffer
Abstract: si1084
Text: ^EDI EDI81257CB Electronic Design» inc. High Speed 256K Monolithic SRAM OiF@M/OTD[N] 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 256Kx1 bit CMOS Static
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OCR Scan
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EDI81257CB
256Kx1
EDI81257CB
MIL-STD-883,
uln buffer
si1084
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PDF
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edi8832
Abstract: EDI8834
Text: ^EDI Static RAM Selector Guide Electronic D««lgna Inc. Static RAMs for High Performance Systems, Commercial and Miilitary; Monolithic and Modules Electronic Designs Incorporated is a lead ing international supplierof high-performance, high-reliability Static RAM products to all seg
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EDI8M8512L
Abstract: No abstract text available
Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28
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EDH816H64CX2
EDI88128PXXNM
EDI88130CSXXNB
188130LPSXXNB
EDI88130PSXXNB
188128CXXLB
EDI88128CXXLM
EDI88128LPXXLB
EDI88128LPXXLM
EDI88128PXXLB
EDI8M8512L
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dram zip 256kx16
Abstract: I8833C
Text: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2
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64kx4 DRAM
Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform ance, low power, 262,144bit C M O S Static R A M orga 32Kx8 bit C M O S Static
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EDI8833C/LP/P
32Kx8
EDI8833C/LP/P
144bit
32Kx8.
MIL-STD-883,
64Kx4
EDI8466CB.
256Kx1
EDI81256C/LP/P.
64kx4 DRAM
SRAM 6T
PS-136
4Kx1 DRAM
EDI8F8512LP MILITARY
4Kx1 SRAM
5962-89598
EDI8833LP
32kx8 bit low power cmos sram
edi84256
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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EDH816H64C
EDI2018QC
EDI20181C
EDI20182C
EDI20183C
EDI20184C
EDI20185C
EDI2040C
EDI2041C
EDI2042C
synchronous sram
4Kx1 DRAM
SRAM 6T
SRAM
DRAM 64kx16
edi8832
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PDF
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