PCF8572
Abstract: PCF8582E-2 PCF8571 PCD8582D-2 PCF8570 PCF8581 PCF8582C-2 PCF8582F2 723H PCA8582
Text: Philips Semiconductors Preliminary specification 256 x 8-BIT CMOS EEFROMS with l2C-bus interface PCx8582x-2 Family NAPC/PHILIPS SEMICOND b3E D ^53*124 0072751 ^50 » S I C 3 FEATURES • Non-volatile storage of 2 Kbits organized as 256 x 8-bits • Only one power supply required
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OCR Scan
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PCx8582x-2
PCF8570,
PCF8571,
PCF8572
PCF8581
PCF8582E-2
PCF8571
PCD8582D-2
PCF8570
PCF8581
PCF8582C-2
PCF8582F2
723H
PCA8582
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PDF
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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OCR Scan
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/S29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
AS29IV800B-80SC
AS29D/800B-80SI
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary l3C|4014/bC|4014 Y 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-proteddon during power-up/power-down cycles > Industry-standard 32-pin 256K x 8 pinout > Conventional SRAM operation; unlimited write cycles
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OCR Scan
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4014/bC
256Kx8
32-pin
10-year
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PDF
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1993e
Abstract: A14C bq4011 bq4011-100 bq4011-150
Text: bq4011/foq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM General Description Features >- D ata retention in the absence of power ► Automatic write-protection during power-up/power-down cycles >• Industry-standard 28-pin 32K x 8 pinout >- Conventional SRAM operation;
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OCR Scan
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
condit11YMA-150N.
bq4011-70
bq4011Y-70
bq4011YMA-70N
1993e
A14C
bq4011-100
bq4011-150
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
lithi50N.
bq4010-70
bq4010Y-70
bq4010YMA-70N
bq4010
bq401
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PDF
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29LVS00
Abstract: 29LV800 AS29 AS29LV800 LI400
Text: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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OCR Scan
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8/512Kx
AS29LV800
1Mx8/512Kx16
64Kbyte
32Kword
AS29IV800T80SE
AS29D/800T-100SC
AS29D/800T-100SI
AS29LV800T-120SC
AS29LV800T-120SI
29LVS00
29LV800
AS29
AS29LV800
LI400
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PDF
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TCA 255
Abstract: BQ2001 27217
Text: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser
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OCR Scan
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bq2001
bq2001
bq2001-based
400pAtyp.
700nAmax.
1991F
24-pin
TCA 255
27217
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PDF
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8622C
Abstract: COP8622C COP8642CMHD
Text: COP8640CMH/COP8642CMH National Semiconductor COP8640CMH/COP8642CMH Microcontroller Emulator General Description Features The COP8640CMH/COP8642CMH hybrid emulators are members of the COPS microcontroller family. The devic es offered in 28-pin DIP LCC and 20-pin DIP contain trans
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OCR Scan
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COP8640CMH/COP8642CMH
COP8640CMH/COP8642CMH
28-pin
20-pin
16-bit
8622C
COP8622C
COP8642CMHD
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PDF
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Untitled
Abstract: No abstract text available
Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq401
Q/bq4010Y
bq4011
144-bit
28-pin
10-year
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PDF
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SANYO M 4515 LU
Abstract: AIM1 d 4515 RC11 FM*ME
Text: NO. * 4515 22593 C W O Û C 1 I r v y o Û O l » ^ « K M t ia iK D /D 2 M A C x □ t # \ A s, • awiiù t / / M A C f 'a - J ' a » ft i ? »• / / • D MAC J3 j: If D2 MAC r ^ - Ki : £ K fc t - < T • IM S T i t ® = A l * « ) * • ( R G B ,/ / - r , ? < A t 4 > 7 ? , f j * 4 * * *
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OCR Scan
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STK95192
STK9519I
STK95192
STK95193
STK95194
STK951921?
SANYO M 4515 LU
AIM1
d 4515
RC11
FM*ME
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4011/bq4011Y
32Kx8
bq4011
144-bit
bq4011-70
bq4011Y-70
bq4011YMA-70N
bq4011
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PDF
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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OCR Scan
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/20SC
AS29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011 Y 32Kx8 Nonvolatile SRAM Features General Description V D ata retention in the absence of power The CMOS bq4Qll is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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OCR Scan
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bq4011/bq4011
32Kx8
28-pin
10-year
144-bit
out-150N.
bq4011-70
bq4011Y-70
bq4011YMA-70N
bq4011
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PDF
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BQ2001
Abstract: No abstract text available
Text: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser
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OCR Scan
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bq2001
bq2001
bq2001-based
400pA
1991E
1991D.
1991F
1991E.
1992G
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PDF
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KM28C64B
Abstract: KM28C64B-15 eefrom
Text: PRELIMINARY KM28C64B/KM28C65B CMOS EEPROM 8Kx 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64B/65B: Commercial — KM28C64B/65BI: Industrial • Simple Byte Write & Page Write — Single TTL Level Write Signal
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OCR Scan
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KM28C64B/KM28C65B
KM28C64B/65B:
KM28C64B/65BI:
KM28C65B)
64-Byte
100piA--Standby
40mA--Operating
1555H
KM28C64B
KM28C64B-15
eefrom
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PDF
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