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    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)


    Original
    PDF ELM34802AA-N ELM34802AA-N P6803HVG May-10-2006

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)


    Original
    PDF ELM34802AA-N ELM34802AA-N P6803HVG May-10-2006

    ELM34802AA

    Abstract: No abstract text available
    Text: 双 N 沟道 MOSFET ELM34802AA-N •概要 ■特点 ELM34802AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET,内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 68mΩ (Vgs=10V) ·Rds(on) < 98mΩ (Vgs=5V) ■绝对最大额定值


    Original
    PDF ELM34802AA-N May-10-2006 ELM34802AA

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー N チャンネル MOSFET ELM34802AA-N •概要 ■特長 ELM34802AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=4.5A MOSFET です。 ・ Rds on < 68mΩ (Vgs=10V)


    Original
    PDF ELM34802AA-N May-10-2006