PLC siemens S7-200 cpu 222
Abstract: plc em 231 em-232 siemens PLC siemens S7-200 EM277 PLC siemens S7-200 cpu 226 PLC S7 ladder logic of real time clock ppi cable to rs485 Wiring Diagram s7-200 siemens plc analog em 231
Text: SIMATIC S7-200 Micro PLC General Description Ordering Information The SIMATIC S7-200 Micro PLC system offers a complete range of products to fit almost any control or automation application. Each compact S7-200 CPU unit is completely self-contained and includes the CPU, power supply, and
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S7-200
AuAD200AA0
6ES72921AE200AA0
6ES72921AG200AA0
6ES79720BA110XA0
6ES79720BB110XA0
6ES79720BA500XA0
PLC siemens S7-200 cpu 222
plc em 231
em-232 siemens
PLC siemens S7-200
EM277
PLC siemens S7-200 cpu 226
PLC S7 ladder logic of real time clock
ppi cable to rs485
Wiring Diagram s7-200 siemens
plc analog em 231
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LAL 2.25
Abstract: NDT451 NDT451AN TRANSISTOR b72
Text: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's
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NDT451
NDT451AN
OT-223
LAL 2.25
TRANSISTOR b72
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NDT3055
Abstract: No abstract text available
Text: t* September 1996 National Semiconductor" N D T3055 N-Channel Enhancement M ode Field Effect Transistor General Description Features P ow er SO T N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's
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NDT3055
NDT3055
OT-223
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TRANSISTOR b72
Abstract: motor IG 42c NDT452AP
Text: June 1996 National Semiconductor" N D T452A P P-Channel Enhancement M ode eld Effect Transistor G eneral Description Features These P-Channel e n h a n ce m e n t m o d e p o w e r field e ffect tra n s is to rs are pro d u ce d using N a tio n a l's p ro p rie ta ry , hig h cell de n sity, DM O S te ch n o lo g y.
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NDT452AP
NDT452AP
OT-223
TRANSISTOR b72
motor IG 42c
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055VL TM OS V N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is -
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MMFT3055VL/D
FT3055VL
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74LS573
Abstract: 74HCT573 SP74HCT573 SP74HCT573J SP74HCT573N DELL power supply
Text: Bit: SP74HCT573 SPI • PIN C O N F IG U R A T IO N OCTAL TRANSPARENT LATCH WITH 3-STATE OUTPUTS ° e 3 v cc E a o 0 Do E Di E 3 °1 ü ]0 2 D2 [T FEATURES E ■ Designed for driving high-capacitance or lowimpedance loads in bus-oriented systems ■ 3-state outputs for 3-state outputs for bus interfacing
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74LS573
SP74HCT573
74LS573.
CE55ES
74LS573
74HCT573
SP74HCT573J
SP74HCT573N
DELL power supply
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I C O N D U C T O R , I N C T O » The TQ 8103 is a m o n o lith ic clo c k and data recovery CDR IC th a t receives TQ8103 NRZ data, extracts the high-speed clock, and presents the separated data and clo ck as its o u tp u ts. T his device is designed sp e cifica lly fo r SONET
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TQ8103
622Mb/s
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t538
Abstract: No abstract text available
Text: PRELIMINARY KM616V513 CMOS SRAM 32,768 WORDx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation Standby (TTL) 3mA (Max.) (CMOS) 100 „A (Max.) Operating K M 616V513J-17:130m A (Max.)
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KM616V513
616V513J-17
616V513J-20
616V513J-25
KM616V513J:
40-Pin
616V513is
288-bit
400mil)
t538
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Untitled
Abstract: No abstract text available
Text: 1 MICRON TECHNO LOG Y INC 1?E D • bUlSMI MICRON ■ MT4067 883C HCWtOlOGV.B« MILITARY DRAM 64K X 4 DRAM T A io - z ^ - n PIN ASSIGNMENT Top View • SM D 5962-87676 18L/300 DIP FEATURES (D-6) • Industry standard pin-out and timing • All inputs, outputs, and clocks are fully TTL
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MT4067
18L/300
150mW
Q00174S
T-46-23-17
MIL-STD-883
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sm 6415 a-4 s
Abstract: 37s64
Text: OKI semiconductor 0 ,i ]7 MSM37S64ARS/37S64RS 1 31 ,072-BIT DYNAMIC RANDOM ACCESS MEMORY ,n^^ 5 GENERAL DESCRIPTION The O ki M S M 37 S 6 4 is a fu lly decoded dynam icJM M O S random a cce ss m em ory organized as 1 3 1 ,0 7 2 o n e -b it w ords using 6 5 ,5 3 6 bit sta cke d. The desTgrf is optim ized for high-speed, high p e rfo r
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MSM37S64ARS/37S64RS
072-BIT
sm 6415 a-4 s
37s64
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20C90
Abstract: SSI202 ssi 202 20C89 ssi-202 ssi 201 DTMF DECODER modem FSK SSI 201 SSI201 4X4X2 Crosspoint Switch
Text: MmMkms INNOVATORS IN/INTEGRATION SSI 22106 8x8x1 Crosspoint Switch with Control Memory Data Sheet GENERAL DESCRIPTION FEATURES The SSI 22106 is an 8x8x1 analog switch array of CMOS transmission gates designed using high-speed CMOS technology. It offers high noise immunity and has very low
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6-line-to-64-line
20C90
SSI202
ssi 202
20C89
ssi-202
ssi 201 DTMF DECODER
modem FSK
SSI 201
SSI201
4X4X2 Crosspoint Switch
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37s64
Abstract: msM37S64A15
Text: OKI semiconductor 0 :,7 M SM 37S64A R S/37S64R S 1 3 1 ,0 7 2 -B IT DYNAMIC RANDOM ACCESS MEMORY , n 5 GENERAL DESCRIPTION The O ki M S M 37 S 6 4 is a fu lly decoded dynam icJslM O S random a cce ss m em ory organized as 1 3 1 ,0 7 2 o n e -b it w ords using 6 5 ,5 3 6 bit sta cke d. The desigrTis optim ized for high-speed, high p e rfo r
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MSM37S64ARS/37S64RS
072-BIT
MSM37S64
mRS/37S64RS
37s64
msM37S64A15
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LH2464-12
Abstract: LH2464-10 lh2464 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30
Text: LH2464 FEA T U R ES NMOS 256K 64K x 4 Dynamic RAM DESCRIPTION • 65,536 x 4 bit organization • A c c e s s times: 100/120/150 ns (M AX.) • C y c le times: 200/220/260 ns (MIN.) • P a g e mode, Read-M odify-W rite operation T h e LH 2 4 6 4 is a 65,536 x 4 bit d yn a m ic R A M fabri
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LH2464
18-pin,
300-mil
DIP18-P-300)
LH2464-10
LH2464-12
LH2464-10
dynamic ram nmos 18 pins
LH2464-15
64k nmos dynamic ram
TOED30
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D KM49C512/L/SL • 7 ^ 4 1 4 2 QQiaaTfi TDT «SriGK CMOS DRAM 512K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM49C512/L/SL-7 KM49C512/L/SL-8 KM49C512/L/SL-10 I rac feie tRC
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KM49C512/L/SL
KM49C512/L/SL-7
KM49C512/L/SL-8
KM49C512/L/SL-10
130ns
150ns
100ns
180ns
cycle/16ms
cycle/128ms
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CK6247
Abstract: CK6247WA ck62 Raytheon Company subminiature tubes
Text: TECHNICAL RAYTHEON INFORMATION RELIABLE SUBMINIATURE TRIODE TYPE jlu . CK6247 WA T he CK6247W A is a h e a te r-c a th o d e ty p e h ig h -m u trio d e of su b m in ia tu re c o n s tru c tio n desig ned for a p p lic a tio n s where freedom from m ic ro p h o n ic response is of prim ary im po rtan ce.
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CK6247
CK6247WA
ck62
Raytheon Company
subminiature tubes
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KM416C1200a
Abstract: km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A
Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode C M O S D RAM s. Fast P age M ode o ffe rs high speed random a c c e s s o f m em o ry ce lls w ith in th e sa m e row. P o w e r su p p ly vo lta g e + 5 .0 V o r + 3 .3V , refresh
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KM416C1000A,
KM416C1200A
KM416V1000A,
KM416V1200A
16Bit
1Mx16
DQ8-DQ15
D020331
KM416C1200a
km416c1200
KM416V1000A
samsung pram
V1000A
C1200A
C1000A
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IR35-207-3
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿P D 4 2 S 1 7 8 0 5 , 4 2 1 7 8 0 5 16M -BIT DYNAM IC RAM 2 M -W ORD BY 8-BIT, EDO D e s c rip tio n The fiPD42S17805,4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17805
uPD4217805
PD42S17805
P042S17805,
28-pin
juPD42S17805-50
42S17805-60,
42S17805-70,
IR35-207-3
IR35-207-3
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PCD3344P
Abstract: PCF84C00 MAB8048 PCD3344 PCD3344T S028 PCF8571
Text: D EVELO P M E N T DATA This data sheet contains advance information and specifications are subject to change w ithout notice. PC D3344 C M O S M IC R O C O N T R O L L E R W ITH O N -C H IP D TM F G E N E R A T O R G E N E R A L D E S C R IP T IO N The PC D 3344 is a single-chip 8 -b it m ic ro c o n tro lle r fab rica te d in CMOS and is a m em ber o f the
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PCD3344
PCD3344
PCD33XX
28-lead
TEA1060/1061/1067/1068
MB7020160
PCD3360
PCD3344P
PCF84C00
MAB8048
PCD3344T
S028
PCF8571
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA1000 Product Description M otorola Program m able A rray MPA p roducts are a high density, high perform ance, low cost, solution fo r yo u r reconfigurable logic needs. W hen used w ith o u r autom atic high perform ance design tools, M PA delive rs custom logic
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MPA1000
PA1000
b3b724fl
DL201
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Untitled
Abstract: No abstract text available
Text: Preliminary Information AMD-K6 -2 Processor Data Sheet 21850F/0—February 1999 1 AMD£I AMD-K6®-2 Processor • A dvanced 6-Issue RISC86® S uperscalar Micro arch itectu re ♦ Ten p a ra lle l specialized execution un its ♦ M ultiple sophisticated x86-to-RISC86 in stru ctio n decoders
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21850F/0â
RISC86Â
x86-to-RISC86
RISC86
64-Kbyte
32-Kbyte
20-Kbytes
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V96SSC25LP
Abstract: No abstract text available
Text: ‘ÌOOMEOO 0 0 0 0 3 0 3 ISA V96SSC • * * ▼ / Rev. BO HIGH-INTEGRATION SYSTEM CONTROLLER FOR ¡960 Sx/Jx AND PowerPC 401 Gx PROCESSORS • Direct interface to ¡960Sx/Jx and PPC401Gx processors • High-performance burst DRAM controller • Two-channel fly-by DMA controller
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V96SSC
25MHz
100-pin
i960Sx
i960Jx
i960Sx/Jx
PPC401Gx
8/16-bit
32-bit
V96SSC
V96SSC25LP
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Untitled
Abstract: No abstract text available
Text: tß Semiconductor 54ABT16244 G uaranteed output skew General Description The ’A B T 1 6 2 44 contains sixteen non-inverting butters with TRI-STATE outputs d esigned to be em ployed as a m em ory and address driver, clock driver, or bus oriented transm itter/
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54ABT16244
54ABT16244
16-bit
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circuit diagram of speech recognition
Abstract: 9651h KEYPAD 4 X 4 source code DF320 matrix encoded keypad telephone keypad interface circuit with dtmf MT4320 KEYPAD SWITCH debounce telephone KEYPAD MT4322
Text: / / ISO-CMOS M T 4 d £ 0 / 4 3 2 2 f 4 3 2 3 M IT E L Keypad Pulse Dialer JA N . 1982 Features • • • • • • • • Pin Connections Pin fo r pin rep la cem en t fo r the DF320 2.5V to 5.5V sup ply volta ge o p era ting range 375pW dyn am ic pow er d is s ip a tio n at 3.0V
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0/4322f4323
DF320
375pW
58MHz
MT4320.
MT4320/4322/4323
circuit diagram of speech recognition
9651h
KEYPAD 4 X 4 source code
DF320
matrix encoded keypad
telephone keypad interface circuit with dtmf
MT4320
KEYPAD SWITCH debounce
telephone KEYPAD
MT4322
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Untitled
Abstract: No abstract text available
Text: AMD£I AMD-K6 -III Processor Data Sheet AMDH P R O C E S S O R 3 0 IVO W l. VI '• ! ;- Î Preliminary Information AMD-K6-III Processor Data Sheet AMDZI 1999 Advanced Micro Devices, Inc. AU rights reserved. The contents of this docum ent are provided in connection w ith A dvanced Micro
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8M-3/99-0
1918A
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