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    EPA240B Search Results

    EPA240B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA240B Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA240B-100F Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA240B-100P Excelics Semiconductor Non-Hermetic 100 mil Package High Efficiency Heterojuction FETs Original PDF
    EPA240BV Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF

    EPA240B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EPA240BV

    Abstract: EPA240B
    Text: EPA240B/EPA240BV High Efficiency Heterojunction Power FET FEATURES • • • • • • 960 50 +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA240B/EPA240BV EPA240B EPA240BV 18GHz EPA240BV)

    GM 90 562 573

    Abstract: EPA240B-100F
    Text: Excelics EPA240B-100F DATA SHEET High Efficiency Heterojunction Power FET '  7<3 ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE • PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=8GHz Vds=8V, Ids=50% Idss f=12GHz Gain at 1dB Compression


    Original     		PDF EPA240B-100F 12GHz GM 90 562 573 EPA240B-100F

    AuSn eutectic

    Abstract: EPA240B100P 100MIL EPA240B-100P
    Text: EPA240B-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA240B-100P 100MIL 12GHz 18GHz 710mA AuSn eutectic EPA240B100P EPA240B-100P

    EPA240BV

    Abstract: EPA240B
    Text: Excelics EPA240B/EPA240BV DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EPA240B/EPA240BV EPA240B EPA240BV 18GHz EPA240B 12GHz

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    b1415

    Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
    Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs


    Original     		PDF RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C