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    F12N10 Search Results

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    F12N10 Price and Stock

    Harris Semiconductor F12N10L

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    ComSIT USA F12N10L 27
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    MOS F12N10L

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    Chip 1 Exchange F12N10L 634
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    Harris Semiconductor PCF12N10LWR4654

    HA PCF12N10LWR4654
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    ES Components PCF12N10LWR4654 52
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    IXYS Integrated Circuits Division IXZ4DF12N100

    IC-4DF12N100 MOSFET DRIVER RF 12A
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    Ozdisan Elektronik IXZ4DF12N100
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    F12N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f12n10l

    Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
    Text: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L f12n10l f12n10 AN7254 AN7260 RFP12N10L TB334

    F12N10L

    Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
    Text: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12N10L f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334

    F12N10L

    Abstract: f12n10
    Text: RFP12N10L Data Sheet Title FP1 10L bt A, 0V, 00 m, gic vel, Cha el wer OST utho July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use


    Original     		PDF RFP12N10L TA09526. F12N10L f12n10

    F12N10L

    Abstract: f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig
    Text: RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12N10L f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig

    Untitled

    Abstract: No abstract text available
    Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L RFP12N10L

    F12n10

    Abstract: No abstract text available
    Text: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12n10

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    f12n10l

    Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
    Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits


    OCR Scan     		PDF RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"

    f12n10l

    Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
    Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L


    OCR Scan     		PDF 01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"

    F12N10L

    Abstract: f12n10
    Text: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan     		PDF RFP12N10L O-22QAB 200i2 AN7254 AN7260 RFP12N101Test F12N10L f12n10

    F12N10L

    Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
    Text: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF RFM10N12L/15L RFP10N12L/15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L F12N10L f12N08L f12n08 f12n10 RFM12N08L RFM12N10L

    f12n10L

    Abstract: f12n10
    Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFP12N10L TA09526. RFP12N10L 0-56mA AN7254 AN7260 75BVds f12n10L f12n10

    F12N08L FET

    Abstract: F12N10 12N08l
    Text: 13 0 2 27 1 a0S17t,M TSt " H A S . . . . RFM12N08L/1OL RFP12N08L/10L H a r r is N -Chan nel Logic Level Power Field-Effect Transistors L 2 FET August 1991 Package Features TO-204AA BOTTOM VIEW • 12A, 80V and 100V • rDS(ON) = 0 2 n SOURCE f • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF a0S17t RFM12N08L/1OL RFP12N08L/10L O-204AA RFM12N08L RFM12N10L 92CS-372I6 92CS-572I7 92CS-372I8 F12N08L FET F12N10 12N08l