2SK2179
Abstract: F3E50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2179
F3E50VX2)
2SK2179
F3E50VX2
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F3E50VX2
Abstract: MOSFET 500V 15A 2SK2179
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2179
F3E50VX2)
F3E50VX2
MOSFET 500V 15A
2SK2179
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F3E50VX2
Abstract: 2SK2179
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2179
F3E50VX2)
F3E50VX2
2SK2179
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack (Unit : mm) 500V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2179
F3E50VX2)
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MOSFET IRF 630
Abstract: No abstract text available
Text: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l
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Untitled
Abstract: No abstract text available
Text: V X - H v U - X /X 9 —MOSFET VX-n SERIES POWER MOSFET 2SK2179 F3E50VX2 500v 3a ') " I V i v i, ¿> IJ $ -J-. I>12, 7 -1 i_- r ' K L e a d ty p e is a v a ila b le . • i /•£ $ S ee P . 12, 7 -1 R A T IN G S A bsolute Maximum R atings j'H Item FI ( T c =25°C)
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2SK2179
F3E50VX2)
Tot30
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Untitled
Abstract: No abstract text available
Text: V X - ü v U - X / t 7 —MOSFET VX-ÏÏ SERIES POWER MOSFET X> / \> *X > h & O U T L IN E D IM E N S IO N S 2SK 2179 F3E50VX2 500v 3a ') - V 9 4 7°&è O î t , P 12, 7-1£ <£ ë i/'o Lead type is available. See P. 12, 7-1 MËtëM R A T IN G S • J Ê Îiii^ /È të
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F3E50VX2)
GDG5257
2SK2179
CF3E50VX2)
00022SÃ
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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Untitled
Abstract: No abstract text available
Text: V X - I v U - X /17-M O SFET V X -n SERIES POWER MOSFET • W fé rfÜ IH O U T L IN E D IM E N S IO N S 2SK2179 F3E 50V X 2 500v 3 a ij - k y .f y I t o P l l , 7-1 è - E < ti è l 'o Lead type is available. See P. 11, 7-1 ■ R A T IN G S A bsolute Maximum R atings
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/17-M
2SK2179
F3E50VX2)
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