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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)


    OCR Scan     		PDF FA01317 FA01317 M5M27C102P, RV-15 16-BIT)

    Untitled

    Abstract: No abstract text available
    Text: bSM'îflS'î 001Ô071 MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì SO FA01317B G aA s F E T H Y B R ID 1C DESCRIPTION F A 0 1 3 1 7 is RF Hybrid IC designed fo r 1 .5 G H z band small size hand held radio. FEATURES • High efficiency 3 5 % • High po w er 3 0 . 5 (dBm )


    OCR Scan     		PDF FA01317B 50kHz 100kHz 1441M

    f7108

    Abstract: FA01317 F7132P F7122
    Text: • GaAs FET MODULE FOR HANDY PHONE Max. ratings Application Type No. Po min Va (V) v« (V) h (A) mm max min max (V) Vn (V) f(M H ï) % Stad P in Hanw (max) (min) (dB) ( - ) VT TciOP) CC) (min) Pin (dBm) (dBm) (% ) FAQ13I4 1 7 1 0 - 1785MHz,32.5dBm Power AMP. PCN


    OCR Scan     		PDF FAQ13I4 FA01317 FA013I9A FA012I5 FA01216 FA012I9 FA01220 1785MHz 1453MHz 1890to f7108 F7132P F7122