tip42
Abstract: TIP42BTU transistor tip41 tip42c
Text: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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TIP42
TIP42/42A/42B/42C)
TIP41/41A/41B/41C
O-220
TIP42
TIP42A
TIP42B
TIP42C
TIP42BTU
transistor tip41
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OF TRANSISTOR tip41
Abstract: transistor cross reference
Text: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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TIP41
TIP41/41A/41B/41C)
TIP42/42A/42B/42C
O-220
TIP41
TIP41A
TIP41B
TIP41C
OF TRANSISTOR tip41
transistor cross reference
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fairchild dc 41A
Abstract: No abstract text available
Text: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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TIP41
TIP41/41A/41B/41C)
TIP42/42A/42B/42C
O-220
TIP41
TIP41A
TIP41B
TIP41C
fairchild dc 41A
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TIP41C
Abstract: TIP41 TIP41A TIP41B tip41 transistor
Text: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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TIP41
TIP41/41A/41B/41C)
TIP42/42A/42B/42C
O-220
TIP41
TIP41A
TIP41B
TIP41C
TIP41C
TIP41A
TIP41B
tip41 transistor
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transistor TIP42
Abstract: TIP42C TIP42 TIP42A TIP42B
Text: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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TIP42
TIP42/42A/42B/42C)
TIP41/41A/41B/41C
O-220
TIP42
TIP42A
TIP42B
TIP42C
transistor TIP42
TIP42C
TIP42A
TIP42B
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FDP3672
Abstract: diode marking 41a on semiconductor marking n6
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
FDP3672
diode marking 41a on semiconductor
marking n6
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
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MOSFET S1A
Abstract: M060 45E-2
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
MOSFET S1A
M060
45E-2
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fdp3672
Abstract: diode marking 41a on semiconductor 100E30
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
fdp3672
diode marking 41a on semiconductor
100E30
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tip42
Abstract: transistor TIP42 of TIP41
Text: TIP42 SERIES TIP42/42A/42B/42C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP41/41A/41B/41C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol : TIP42
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TIP42
TIP42/42A/42B/42C)
O-220
TIP41/41A/41B/41C
TIP42
TIP42A
TIP42B
TIP42C
transistor TIP42
of TIP41
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • rDS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
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of TIP41
Abstract: data transistor tip41 OF TRANSISTOR tip41 TIP41 TIP41C
Text: TIP41 SERIES TIP41/41A/41B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol VCBO : TIP41
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TIP41
TIP41/41A/41B/41C)
O-220
TIP42/42A/42B/42C
TIP41
TIP41A
TIP41B
TIP41C
of TIP41
data transistor tip41
OF TRANSISTOR tip41
TIP41C
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
O-220
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TC143E
Abstract: T 105 micro 25E3
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
FDP3672
O-220
TC143E
T 105 micro 25E3
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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10.7A
Abstract: No abstract text available
Text: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
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FDD5353
FDD5353
10.7A
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76132S
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S Data Sheet December 2002 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132S
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76132P
Abstract: AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 76132S
Text: HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132P
AN9321
AN9322
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
76132S
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76132P
Abstract: TA7613 AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Text: HUF76132P3, HUF76132S3S Data Sheet December 2001 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132P
TA7613
AN9321
AN9322
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
6132P
HUF76
132S3
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118E-2
Abstract: KP120 TC292
Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
6132P
HUF76
132S3
118E-2
KP120
TC292
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transistor tip 41a
Abstract: TIP 41c transistor TIP41
Text: TIP41 SERIES TIP41/41 A/41 B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem ent to TIP 42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol Rating V 60 V TIP41B 80 V TIP41C
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TIP41
TIP41/41
B/41C)
42/42A/42B/42C
TIP41A
TIP41B
TIP41C
transistor tip 41a
TIP 41c transistor
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Untitled
Abstract: No abstract text available
Text: TIP41 SERIES TIP41/41 A/41 B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem ent to TIP 42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage Rating Unit 40 V TIP41A 60 V TIP41B
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TIP41
TIP41/41
B/41C)
42/42A/42B/42C
TIP41A
TIP41B
TIP41C
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