Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 6472 6 . 4 — 7 .2 G H z BAND 6 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 6 4 7 2 is an internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 6 . 4 —7 . 2
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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C38V5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 5 . 9 - 6 . 4
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7785A
Abstract: FC36V
Text: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *
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FC36V
GFC38V3M
FC38V
GFC39V
MGFC38V44SQA
GFC39V80B3
GFC39V92B8
FC39V
i742A
7785A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC38V6472 6 .4 —7.2G Hz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 6 .4 - 7 . 2 GHz band am plifiers. The herm etically sealed m etal-ceramic
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MGFC38V6472
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 38V 6472 6 . 4 ~ 7.2GHz BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an internally im pedan ce-m atched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 G H z band amplifiers. The herm etically sealed metal-ceramic
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