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Untitled Abstract: No abstract text available Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Original	PDF	FD8305N FDR8305N
CBVK741B019 Abstract: F63TNR F852 FDR8305N FDR835N Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Original	PDF	FDR8305N CBVK741B019 F63TNR F852 FDR8305N FDR835N
Untitled Abstract: No abstract text available Text: S E M IC O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	OCR Scan	PDF	FDR8305N FD8305N FD8305N
FDR8305N Abstract: N-Channel 2.5V Text: =Ml C O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	OCR Scan	PDF	FD8305N FDR8305N N-Channel 2.5V