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    Abstract: No abstract text available
    Text: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


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    marking 03s

    Abstract: No abstract text available
    Text: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description „ Max rDS on = 43 m: at VGS = 10 V, ID = 4.8 A The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDN7603S FDN7603S marking 03s