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    FDPF10N60 Price and Stock

    onsemi FDPF10N60NZ

    MOSFET N-CH 600V 10A TO220F
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    DigiKey FDPF10N60NZ Tube
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    Newark FDPF10N60NZ Bulk 17 1
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    Bristol Electronics FDPF10N60NZ 250
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    Quest Components FDPF10N60NZ 200
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    Flip Electronics FDPF10N60NZ 728
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    Maritex FDPF10N60NZ 883
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    New Advantage Corporation FDPF10N60NZ 750 1
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    Flip Electronics FDPF10N60NZ

    MOSFET N-CH 600V 10A TO-220F
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    DigiKey FDPF10N60NZ Tube 300
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    onsemi FDPF10N60ZUT

    MOSFET N-CH 600V 9A TO220F
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    Avnet Americas FDPF10N60ZUT Tube 0 Weeks, 2 Days 596
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    Flip Electronics FDPF10N60ZUT 942
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    Flip Electronics FDPF10N60ZUT

    MOSFET N-CH 600V 9A TO220F
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    DigiKey FDPF10N60ZUT Tube 942
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    Fairchild Semiconductor Corporation FDPF10N60NZ

    Power Field-Effect Transistor, 10A, 600V, 0.75ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDPF10N60NZ 120 1
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    Win Source Electronics FDPF10N60NZ 3,000
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    FDPF10N60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF10N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO-220F Original PDF
    FDPF10N60ZUT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220F-3 Original PDF

    FDPF10N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDPF*10N60NZ

    Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
    Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP10N60ZU FDPF10N60ZUT PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8  Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and


    Original     		FDPF10N60ZUT FDPF10N60ZUT 50nsec PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP10N60NZ FDPF10N60NZ PDF

    FDPF10N60NZ

    Abstract: FDPF*10N60NZ FDP10N60NZ FDPF10N60 600v 10A ultra fast recovery diode
    Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description • RDS on = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		FDP10N60NZ FDPF10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60 600v 10A ultra fast recovery diode PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS on = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDP10N60NZ FDPF10N60NZ PDF

    FDPF10N60ZUT

    Abstract: mosfet 10a 600v 3M-J20 N-Channel 600V MOSFET
    Text: TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP10N60ZU FDPF10N60ZUT FDPF10N60ZUT mosfet 10a 600v 3M-J20 N-Channel 600V MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF10N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 9 A, 800 mΩ Features Description • RDS on = 650 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDPF10N60ZUT 50nsec PDF

    fdpf10n60

    Abstract: No abstract text available
    Text: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP10N60ZU/FDPF10N60ZUT FDP10N60ZU FDPF10N60ZUT fdpf10n60 PDF

    FDPF*10N60NZ

    Abstract: No abstract text available
    Text: The following document contains information on Cypress products. MB39C603 ASSP Phase Dimmable PSR LED Driver IC for LED Lighting Data Sheet Full Production Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		MB39C603 MB39C603 DS405-00021 DS405-00021-2v0-E, FDPF*10N60NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00010-2v0-E ASSP High Power Factor LED Driver IC for LED lighting MB39C602  DESCRIPTION MB39C602 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling the switching on-time depending on the LED load.


    Original     		DS405-00010-2v0-E MB39C602 MB39C602 PDF

    FDPF*10N60NZ

    Abstract: FDPF10n60
    Text: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N60NZ FDPF5N60NZ FDPF*10N60NZ FDPF10n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		DS405-00010-2v0-E PDF

    FDPF*10N60NZ

    Abstract: FDP10N60NZ FDPF10N60NZ switched mode power
    Text: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N60NZ FDPF5N60NZ FDPF*10N60NZ FDP10N60NZ FDPF10N60NZ switched mode power PDF