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    FDPF5N60NZ Price and Stock

    onsemi FDPF5N60NZ

    MOSFET N-CH 600V 4.5A TO220F
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    DigiKey FDPF5N60NZ Tube
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    Avnet Silica FDPF5N60NZ 100 Weeks 50
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    Fairchild Semiconductor Corporation FDPF5N60NZ

    600 V, 4.5 A, 2.0 OHM N-CHANNEL MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA FDPF5N60NZ 2,000
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    Win Source Electronics FDPF5N60NZ 2,436
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    FDPF5N60NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF5N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4.5A TO-220F Original PDF

    FDPF5N60NZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDP5N60NZ FDPF5N60NZ PDF

    FDPF5N60NZ

    Abstract: No abstract text available
    Text: FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		FDP5N60NZ FDPF5N60NZ FDPF5N60NZ PDF

    FDPF*10N60NZ

    Abstract: FDPF10n60
    Text: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N60NZ FDPF5N60NZ FDPF*10N60NZ FDPF10n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N60NZ FDPF5N60NZ PDF

    10-15-0C

    Abstract: mosfet 30s FDP5N60NZ FDPF5N60NZ
    Text: UniFET-IITM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N60NZ FDPF5N60NZ FDPF5N60NZ 10-15-0C mosfet 30s PDF

    FDPF*10N60NZ

    Abstract: FDP10N60NZ FDPF10N60NZ switched mode power
    Text: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP5N60NZ FDPF5N60NZ FDPF*10N60NZ FDP10N60NZ FDPF10N60NZ switched mode power PDF