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    FDPF7N60NZ Price and Stock

    onsemi FDPF7N60NZ

    MOSFET N-CH 600V 6.5A TO220F
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    DigiKey FDPF7N60NZ Tube
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    Rochester Electronics FDPF7N60NZ 4,140 1
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    Flip Electronics FDPF7N60NZ 208
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    Rochester Electronics LLC FDPF7N60NZT

    POWER FIELD-EFFECT TRANSISTOR, N
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    DigiKey FDPF7N60NZT Bulk 431
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    onsemi FDPF7N60NZT

    MOSFET N-CH 600V 6.5A TO220F
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    DigiKey FDPF7N60NZT Tube
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    Verical FDPF7N60NZT 9,228 477
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    FDPF7N60NZT 6,530 477
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    FDPF7N60NZT 1,000 477
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    Rochester Electronics FDPF7N60NZT 16,758 1
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    Fairchild Semiconductor Corporation FDPF7N60NZ

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    Bristol Electronics FDPF7N60NZ 3,000 4
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    Quest Components FDPF7N60NZ 3,596
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    FDPF7N60NZ 2,400
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    Rochester Electronics FDPF7N60NZ 120 1
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    Fairchild Semiconductor Corporation FDPF7N60NZT

    Power Field-Effect Transistor, N-Channel, MOSFET
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    Rochester Electronics FDPF7N60NZT 5,295 1
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    FDPF7N60NZ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF7N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6.5A TO-220F Original PDF
    FDPF7N60NZT ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 6.5A TO-220F Original PDF

    FDPF7N60NZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDP7N60

    Abstract: FDPF7N60NZ fdpf7n60 FDP7N60NZ FDPF 480v
    Text: UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP7N60NZ FDPF7N60NZ FDP7N60 FDPF7N60NZ fdpf7n60 FDPF 480v PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDP7N60NZ FDPF7N60NZ PDF

    FDP7N60

    Abstract: FDP7N60NZ
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25  Features Description • RDS on = 1.05  (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		FDP7N60NZ FDPF7N60NZ FDPF7N60NZ FDP7N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDP7N60NZ FDPF7N60NZ PDF

    FDP7N60NZ

    Abstract: FDPF7N60NZ
    Text: UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 13nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP7N60NZ FDPF7N60NZ FDPF7N60NZ PDF