NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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nec k 813
Abstract: NE850R599A nec 8725
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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AN374REV2
Abstract: No abstract text available
Text: AN374 Application Note Considerations for Light Engine Selection for a CS1630/31 2-Channel TRIAC Dimmable Circuit 1 Overview of the CS1630 The CS1630/31 is a high-performance offline AC to DC LED controller for dimmable and high color rendering index CRI LED replacement lamps and luminaires. It features Cirrus Logic's proprietary digital dimmer compatibility control technology and digital correlated color temperature (CCT) control system that enables two-channel LED color
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AN374
CS1630/31
CS1630
AN374REV2
AN374REV2
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TPS5450-EP
Abstract: 10TPB330M TPS5450 TPS5450MDDAREP
Text: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-EP
SLVS935
110-m
500-kHz
TPS5450-EP
10TPB330M
TPS5450
TPS5450MDDAREP
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TPS5450-EP
Abstract: No abstract text available
Text: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-EP
SLVS935
110-m
500-kHz
TPS5450-EP
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Untitled
Abstract: No abstract text available
Text: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-Q1
SLVS834
2-V/24-V
110-m
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TPS5450QDDARQ1
Abstract: TPS5450-Q1 10TPB330M B540A TPS5450
Text: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-Q1
SLVS834
110-m
500-kHz
TPS5450QDDARQ1
TPS5450-Q1
10TPB330M
B540A
TPS5450
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Untitled
Abstract: No abstract text available
Text: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-Q1
SLVS834
2-V/24-V
110-m
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TPS5450-EP
Abstract: CDRH1127
Text: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-EP
SLVS935
110-m
500-kHz
TPS5450-EP
CDRH1127
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TPS5450-EP
Abstract: 10TPB330M TPS5450 TPS5450MDDAREP
Text: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-EP
SLVS935
110-m
500-kHz
TPS5450-EP
10TPB330M
TPS5450
TPS5450MDDAREP
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TPS5450-EP
Abstract: 10TPB330M TPS5450 TPS5450MDDAREP
Text: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-EP
SLVS935
110-m
500-kHz
TPS5450-EP
10TPB330M
TPS5450
TPS5450MDDAREP
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TPS5450-Q1
Abstract: 10TPB330M B540A TPS5450 TPS5450QDDARQ1
Text: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER
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TPS5450-Q1
SLVS834
110-m
500-kHz
TPS5450-Q1
10TPB330M
B540A
TPS5450
TPS5450QDDARQ1
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FET Data for K 5450
Abstract: 2SK3814 2SK3814-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3814 TO-251 MP-3
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2SK3814
2SK3814
O-251
2SK3814-Z
O-252
O-251)
FET Data for K 5450
2SK3814-Z
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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mq68
Abstract: No abstract text available
Text: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il
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74N20
68N20
O-247AD
O-264
mq68
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Untitled
Abstract: No abstract text available
Text: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2
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O-247AD
74N20
68N20
O-264
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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