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    FET RF HIGH POWER Search Results

    FET RF HIGH POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    FET RF HIGH POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain


    Original     		PDF RD00HHS1 30MHz RD00HHS1 30MHz RD00HHS1-101

    RD 15 hf mitsubishi

    Abstract: TRANSISTOR 7533 A RD00HHS1-101
    Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain


    Original     		PDF RD00HHS1 30MHz RD00HHS1 30MHz RD00HHS1-101 Oct2011 RD 15 hf mitsubishi TRANSISTOR 7533 A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device


    Original     		PDF ILD1011M30 ILD1011M30 ILD1011M30-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device


    Original     		PDF ILD1011M15 ILD1011M15 ILD1011M15-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1214M10 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1214M10 is designed for LBand radar operating at 1200-1400 MHz. This LDMOS FET device under


    Original     		PDF ILD1214M10 ILD1214M10 300us, 300us-10% ILD1214M10-REV-PR1-DS-REV-B

    acp 100k

    Abstract: ACP-100k FA01220A
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm


    Original     		PDF FA01220A FA01220A 1453MHz -50kHz) 50kHz) -100kHz) 100kHz) acp 100k ACP-100k

    fet 547

    Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm


    Original     		PDF FA01219A FA01219A 925MHz fet 547 MA644 90 HYBRID 70 mhz rf power acp 100k

    rd15hvf

    Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz Oct2011 rd15hvf RF Transistor s-parameter 30W transistor d 1302

    rd15hvf

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz rd15hvf

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.


    Original     		PDF ILD0912M400HV ILD0912M400HV 960-1215MHz. ILD0912M400HV-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM3742-4SL TIM3742-4UL 95GHz

    tim8996-30

    Abstract: 7-AA03A
    Text: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz „ HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM8996-30 7-AA03A) tim8996-30 7-AA03A

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5359-4UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5964-30UL 2-16G1B)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5964-6UL Int38 15GHz

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-30UL 7-AA05A)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM4450-4UL

    TIM7785-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-4UL TIM7785-4UL

    2SK2973

    Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
    Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.


    OCR Scan     		PDF 2SK2973 2SK2973 450MHz 17dBm OT-89 OT-89 Conditi38 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284

    High voltage GaAs FET

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm APPLICATION


    OCR Scan     		PDF FA01220A FA01220A Po--30 1453M High voltage GaAs FET

    093.216

    Abstract: 2sk2974 093.941 transistor 2sk2974
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB


    OCR Scan     		PDF 2SK2974 2SK2974 450MHz 30dBm 600mA 093.216 093.941 transistor 2sk2974

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)


    OCR Scan     		PDF FA01317 FA01317 M5M27C102P, RV-15 16-BIT)

    hd 9729

    Abstract: 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89
    Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 ¡s a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm VHF/UHF power amplifiers applications. 1.5±0.1 FEATURES • High power gain:Gpe^13dB @ VDD-9.6V ,f"450MHz, Pin=17dBm


    OCR Scan     		PDF 2SK2973 450MHz, 17dBm OT-89 OT-89 hd 9729 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> OOlfiObT 2T2 FA01314 GaAs FET HYBRID IC DESCRIPTION FA01314 is RF Hybrid IC designed for 1 ,7GHz band small size hand held radio. FEATURES 40 % • High efficiency • High power • High gain • Small size • Frequency range


    OCR Scan     		PDF FA01314 FA01314