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    FGD3N60LSDTF Search Results

    FGD3N60LSDTF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FGD3N60LSDTF Fairchild Semiconductor TRANS IGBT CHIP N-CH 600V 6A 3DPAK TUBE Original PDF

    FGD3N60LSDTF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM PDF

    FGD3N60LSD

    Abstract: FGD3N60LSDTF FGD3N60LSDTM
    Text: FGD3N60LSD IGBT Features Description • High Current Capability Fairchild's Insulated Gate Bipolar Transistors IGBTs provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A


    Original     		FGD3N60LSD FGD3N60LSD FGD3N60LSDTF FGD3N60LSDTM PDF