FLK027XP Search Results

FLK027XP Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLK027XP		Fujitsu	GaAs FET & HEMT Chip		Original	PDF
FLK027XP-E1		Fujitsu	FET: P Channel: ID 0.15 A		Original	PDF

FLK027XP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
108 to 174 mhz Abstract: FLK027XP FLK027XV Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FCSI0598M200 108 to 174 mhz FLK027XP	PDF
1278n Abstract: No abstract text available Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV 1278n	PDF
Untitled Abstract: No abstract text available Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FLK027XP	PDF
FLK027XP Abstract: FLK027XV Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV Unit4888 FLK027XP	PDF
Untitled Abstract: No abstract text available Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FCSI0598M200	PDF
FLK027XP Abstract: GaAs FET HEMT Chips FLK027XV Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FLK027XP FLK027XP GaAs FET HEMT Chips	PDF
FLK027XP Abstract: FLK027XV urn 3177 GaAs FET HEMT Chips Text: FLK027XP, FLK027XV - GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-\|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION	OCR Scan	FLK027XP, FLK027XV FLK027XV FCSI0598M200 FLK027XP urn 3177 GaAs FET HEMT Chips	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet	PDF