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AAEON Technology Inc TF-PFM-P13DW2-A10-01 PC/104 and PCI-104Power Supply Module 90 x 96mm - Bulk (Alt: TF-PFM-P13DW2-A10-01)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TF-PFM-P13DW2-A10-01	Bulk		8 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Molex 173112-0397 D-Sub Contacts HIGH POWER DIN CONN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	173112-0397		2,431			1 $3.64 10 $2.45 100 $2.45 1000 $2.44 10000 $2.36	Buy Now
Molex 173112-0396 D-Sub Contacts HIGH PWR CONTACT DIN FMP139S104
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	173112-0396					1 - 10 - 100 - 1000 $2.49 10000 $2.32	Get Quote

FMP13 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	FMP13N60E O-220AB	PDF
fmp13n60e Abstract: No abstract text available Text: FMP13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	FMP13N60ES O-220AB fmp13n60e	PDF
fmp*13N60E Abstract: fmp13n60e Text: FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	FMP13N60E O-220AB fmp*13N60E fmp13n60e	PDF
13N60 Abstract: 13N60ES 13N60E TO-220F JEDEC Text: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMP13N60ES MS5F7241 H04-004-05 H04-004-03 13N60 13N60ES 13N60E TO-220F JEDEC	PDF
Contacts Abstract: DIN ISO 2768-M je 3055 din iso 2768 M FMP002S106 FMP005S203 FMP002S103 FMP010S104 FMP053S106 FMP062P104 Text: High Power Contacts Hochstromkontakte Technical Data Technische Daten Mechanical Data Mechanische Daten Mechanical Data Mechanische Daten Mating force pair of contacts Steckkraft (Kontaktpaar) Unmating force Ziehkraft Temperature range (test category 55/155/21 to	Original		PDF
FMV07N90E Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)	Original	O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E	PDF
FMX002S102 Abstract: fm8w8 FBM004P154M FK20PL18-02V FM17W2P1 FMP002S103 FM9W4 FMX008P102 FMX012 FMX002P102 Text: Die Titelseite zeigt einen D-Sub Mixed Layout Steckverbinder in Übersichtsdarstellung: • mit verzinntem Stiftsteckverbindergehäuse und Kontaktnoppen • glasfaserverstärktem Polyesterisolierkörper FM • Polbild 13W3 • 10 rechtwinklige Stiftkontakte P5	Original	F1080-13B right11 K1003 K1092S M22520/2-01 M22520/2-08 M22520/5-01 M81969/1-02 PH4001 PH4002 FMX002S102 fm8w8 FBM004P154M FK20PL18-02V FM17W2P1 FMP002S103 FM9W4 FMX008P102 FMX012 FMX002P102	PDF
FMP002 Abstract: ISO+2768+f Text: High Power Contacts Hochstromkontakte Technical Data Technische Daten Mechanical Data Mechanische Daten Mechanical Data Mechanische Daten Mating force pair of contacts Steckkraft (Kontaktpaar) Unmating force Ziehkraft Temperature range (test category 55/155/21 to	Original	FMP003P103 FMP004S103 FMP007P103 FMP003S103 FMP005S103 FMP004P103 FMP006S103 FMP002P103 FMP006P103 FMP005P103 FMP002 ISO+2768+f	PDF
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28	PDF
13N60E Abstract: No abstract text available Text: DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor	Original	MS5F6868 FMP13N60E H04-004-05 H04-004-03 13N60E	PDF
Untitled Abstract: No abstract text available Text: DRAWING MADE IN THIRD ANGLE PROJECTION_ _ THIS D R A W I N G 19 BY AMP INCO R PO R ATED . A LL □ 1ST LQC 15 U NP UBLISHED. I R E L E A S E D FOR P U B L I C A T I O N C O P Y R IG H T IN T E R N A T IO N A L	OCR Scan	0G1A-0240-98 23-JIL-36 Bp1346a/ fmp13	PDF