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    FQD2N60 Search Results

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    FQD2N60 Price and Stock

    onsemi FQD2N60CTM

    MOSFET N-CH 600V 1.9A DPAK
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    DigiKey FQD2N60CTM Cut Tape 2,344 1
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    FQD2N60CTM Digi-Reel 2,344 1
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    FQD2N60CTM Reel 1,370 2,500
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    Avnet Americas FQD2N60CTM Reel 16 Weeks 2,500
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    Mouser Electronics FQD2N60CTM 2,482
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    Arrow Electronics FQD2N60CTM 192,500 16 Weeks 2,500
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    Newark FQD2N60CTM Cut Tape 5
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    Onlinecomponents.com FQD2N60CTM
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    Bristol Electronics FQD2N60CTM 2,500
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    Quest Components FQD2N60CTM 1,988
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    Richardson RFPD FQD2N60CTM 2,500
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    Avnet Asia FQD2N60CTM 16 Weeks 2,500
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    Avnet Silica FQD2N60CTM 17 Weeks 2,500
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    EBV Elektronik FQD2N60CTM 172,500 18 Weeks 2,500
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    New Advantage Corporation FQD2N60CTM 2,500 1
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    Rochester Electronics LLC FQD2N60TF

    MOSFET N-CH 600V 2A DPAK
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    DigiKey FQD2N60TF Bulk 544
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    onsemi FQD2N60TF

    MOSFET N-CH 600V 2A DPAK
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    DigiKey FQD2N60TF Reel 2,000
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    onsemi FQD2N60TM

    MOSFET N-CH 600V 2A DPAK
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    DigiKey FQD2N60TM Reel 2,500
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    onsemi FQD2N60CTF

    MOSFET N-CH 600V 1.9A DPAK
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    FQD2N60 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD2N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQD2N60C Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQD2N60CTF Fairchild Semiconductor 600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel Original PDF
    FQD2N60CTF_F080 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 1.9A DPAK Original PDF
    FQD2N60CTM Fairchild Semiconductor 600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel Original PDF
    FQD2N60CTM_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 1.9A Original PDF
    FQD2N60CTM-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.9A Original PDF
    FQD2N60TF Fairchild Semiconductor 600V N-Channel QFET Original PDF
    FQD2N60TM Fairchild Semiconductor 600V N-Channel QFET Original PDF

    FQD2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQD2N60 / FQU2N60 April 2000 QFET TM FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD2N60 FQU2N60 FQU2N60TU O-251 FQU2N60

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    2N60C

    Abstract: fdu2n60c 305 marking code d-pak
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


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    PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FQU2N60C FQU2N60CTLTU FQU2N60CTU 2N60C fdu2n60c 305 marking code d-pak

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


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    PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    FQD2N60

    Abstract: FQU2N60
    Text: FQD2N60 / FQU2N60 April 2000 QFET TM FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD2N60 FQU2N60 FQU2N60

    FDU2N60C

    Abstract: N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U

    FDU2N60C

    Abstract: FQD2N60C FQU2N60C
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


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    PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C FQD2N60C FQU2N60C

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD2N60, FQU2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.


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    PDF FQD2N60, FQU2N60 FQD2N60

    Untitled

    Abstract: No abstract text available
    Text: FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS on = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


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    PDF FQD2N60C FQU2N60C

    FQD2N60C

    Abstract: FQU2N60C
    Text: TM FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD2N60C FQU2N60C FQU2N60C

    BM02N60

    Abstract: FQD2N60 FQU2N60
    Text: QFET TM FQD2N60 / FQU2N60 BM02N60 General Description Features These N-Channel enhancement mode power field effect transistors are produced using BooklyMicro proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD2N60 FQU2N60 BM02N60 30TYP BM02N60 FQU2N60

    Untitled

    Abstract: No abstract text available
    Text: FQD2N60 / FQU2N60 April 2000 QFET TM FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD2N60 FQU2N60 FQD2N60TF O-252 FQD2N60TM

    fqu2n60c

    Abstract: No abstract text available
    Text: FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS on = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


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    PDF FQD2N60C FQU2N60C FQU2N60C

    Untitled

    Abstract: No abstract text available
    Text: TM FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


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    PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


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    PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


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    PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


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    PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    FSD210 8-pin

    Abstract: dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET
    Text: FSA4157/FSA1156/FSA1157 Industry’s Smallest Low Ohm Switches The FSA4157, FSA1156 and FSA1157 are 1 ohm single pole/double throw analog switches in MicroPakTM packaging that provides an 84% space savings over traditional SOT-23 packaging. These devices feature low On resistance RON


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    PDF FSA4157/FSA1156/FSA1157 FSA4157, FSA1156 FSA1157 OT-23 FSA1156 FSA1157 FSA4157/FSA1156/FSA1157 FIN1215/FIN1216/FIN1217/FIN1218 FSD210 8-pin dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET