fr3t
Abstract: No abstract text available
Text: FR3T.FR3Y /4 Surface mount diode Fast silicon rectifier diodes 4 0 : ; 5 ; ; - %- 5 ; ; - 9 ; - /< 7 3 18 7 6 * #:% # 6 ) )? #8> # ).? ).? ).? ; ; 4 18 7 .3 * 1: 7 ) *
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fr3t
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N,FR3T Strobe Flasher Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.2 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 1.5 s
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FR3N
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N,FR3T Strobe Flasher Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.2 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 1.5 s
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Untitled
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N,FR3T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.2 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 1.5 µs
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Untitled
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N,FR3T Strobe Flasher Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.2 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 1.5 µs
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jumpher
Abstract: No abstract text available
Text: FlexROM III User’s Manual Version 1.0 Copyright 2001 by TechTools, all rights reserved This page intentionally blank Table of Contents Introduction . 3
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---100ma
300ma
jumpher
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traffic flasher
Abstract: fr3t
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N, FR3T Strobo Flasher Applications fast recovery • Average Forward Current: IF (AV) = 0.2 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 1.5 µs
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000707EAA2
traffic flasher
fr3t
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Untitled
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N, FR3T Strobo Flasher Applications fast recovery • Average Forward Current: IF (AV) = 0.2 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 1.5 µs
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000707EAA2
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Untitled
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N,FR3T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.2 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 1.5 µs
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Untitled
Abstract: No abstract text available
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N, FR3T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.2 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 1.5 µs
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fr3t
Abstract: TFR3N fr3n led flasher traffic traffic flasher
Text: TFR3N,FR3T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR3N,FR3T Strobe Flasher Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.2 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 1.5 µs
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fr3n
Abstract: fr3t
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE O STRO BO FLASHER APPLICA TIO N S. FA ST REC O V ERY • • • Average Forward Current : I f (AV) =0.2A Repetitive Peak Reverse Voltage : V r r m = 1000, 1500V Reverse Recovery Time * tj*|-—1.5/a MAXIMUM RATING
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fr3t
Abstract: fr3n NL 006 toshiba diode 1A marking code toshiba toshiba marking code diode fr3n
Text: TOSHIBA TFR3N,FR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, FR3T a STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV) —0.2A Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V Reverse Recovery Time
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961001EAA2'
fr3t
fr3n
NL 006
toshiba diode 1A
marking code toshiba
toshiba marking code diode fr3n
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TFR3N,FR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, FR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV)= 0-2A Repetitive Peak Reverse Voltage : Vf>j>M = 1000, 1500V Reverse Recovery Time
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BSX20
Abstract: BSX19 100MA 45 V NPN
Text: / , 'ï B S X 19 B S X 20 NPN SILICON PIANAR EPITAXIAL TRANSISTORS ISSitM i CASE TO-18 M THE BSX19 AND BSX20 ARE NPN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERT HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS C o lle c to r - B a s e V o lta g e
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bsx19
bsx20
500mA
360mW
100mA
10hiA
100MA 45 V NPN
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FR3N
Abstract: No abstract text available
Text: FR3T T O SH IB A TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N FR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • «B- Average Forward Current : Ijf (AV) —0.2A Repetitive Peak Reverse Voltage : V rrjv[=1000, 1500V Reverse Recovery Time
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961001EAA2'
FR3N
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MX 0542
Abstract: 2SK833 M2SK833 2SK8331 wcm transistor
Text: M O S Field E ffe c t P o w e r T r a n s is to r FE T x i f f l 2SK833 Ü , < , FETT*> x ^ y f > 7 W I 4 A ff f in - c KMM T O r * jg , : mm 0 3 . 2 + 0.2 DC-DC 3 / ' ^ - ; i : f a t t . 4# i t ° V d s s = 900 V, Id(DC) = 5 A 0 { â ^ > Σ ÎÆ RD S(on)^4.0Q
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2SK833
50tig
MX 0542
2SK833
M2SK833
2SK8331
wcm transistor
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TFR3N
Abstract: No abstract text available
Text: TO SH IBA TFR3N,FR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, FR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV) — 0.2 A Repetitive Peak Reverse Voltage : V r r m = 1000, 1500 V Reverse Recovery Time
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