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Text: PUA3228 Transistors Common Emitter Transistor Array Number of Devices3 Type NPN/PNP PNP V(BR)CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)2 P(D) Max. (W)20# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: 2SA762-2 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2571-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)130 V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)95 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC1588 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.7 Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)
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Text: 2SC1196 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A)750m Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition)
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Text: AWL9555 802.11a/n WLAN Power Ampliier Data Sheet - Rev 2.3 FEATURES • -33 dB Dynamic EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 220 mA Supply Current @ +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 29 dB of Linear Power Gain
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Text: 1561-1604 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: CS1893 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A) Absolute Max. Power Diss. (W)450m Maximum Operating Temp (øC) I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SDM4005 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.
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Text: 2N3442+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)10 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)10
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Text: GT322M4 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)32ã V(BR)CBO (V)32 I(C) Max. (A)10m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: 1561-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: NTE108 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: ZT3442 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)10 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175# I(CBO) Max. (A)30m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1571-1425 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: NTE234 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1571-1220 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2868GR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1234 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m
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Text: 2SA1321 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)50m Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: AP1114 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)90ö V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: 40469 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)
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Text: KSB772 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 40476 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)
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