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    FUJITSU TRANSISTOR ARRAY Search Results

    FUJITSU TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    netronics

    Abstract: D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613
    Text: F A L L 2 0 0 0 Fujitsufocus The News on the Latest Semiconductor Technologies and Products From Fujitsu Microelectronics, Inc. Revolutionary 0.11 Micron Technology A breakthrough in ASIC solutions, Fujitsu’s new 0.11 micron process technology combines the lowest power, fastest transistor and most compact memory in the


    Original     		32-bit CORP-NL-20840-09/2000 netronics D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613 PDF

    MB86520

    Abstract: 4-phase VOH01 MB-86
    Text: March 1991 Edition 2 .0 FUJITSU DATASHEET' MB86520 STEPPING MOTOR CONTROLLER STEPPING MOTOR CONTROLLER The Fujitsu MB86520, utilizing CM OS technology, is a universal controller for 4-phase stepping motor. It is intended to be used in conjunction with switching transistor e.g. Fujitsu FT 6000 series ,


    OCR Scan     		MB86520 MB86520, PV013 4-phase VOH01 MB-86 PDF

    MB86520

    Abstract: No abstract text available
    Text: June 1990 Edition 1.0 d a ta sh eet FUJITSU : MB86520 STEPPING MOTOR CONTROLLER STEPPING MOTOR CONTROLLER The Fujitsu MB86520, utilizing CMOS technology, is a universal controller for 4-phase stepping motor. It is intended to be used in conjunction with switching transistor e.g. Fujitsu FT 6000 series ,


    OCR Scan     		MB86520 MB86520, D-6000 MB86520 PDF

    FT5754M

    Abstract: FT5754 FT5754M Pin FT5757M FT5757 T-43-25 FT57 B-500 diode
    Text: FUJITSU MICROELECTRONICS 31E D 374*i7b2 GOlbbbM 3 E l F ill January 1990 Edition 1.1 FTS7S4M, FT5757M FUJITSU PRODUCT PRO FILE- Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS Rating Ta = 25°C Symbol Condition Value Unit -5 5 ~ +150 °C


    OCR Scan     		FT5754M, FT5757M 10-Pi T-43-25 Ta-25 Ta-25Â FT5754M FT5754 FT5754M Pin FT5757M FT5757 T-43-25 FT57 B-500 diode PDF

    FT5754M

    Abstract: FT5754 FT5757M FT5754M Pin ft5757
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE' FT5754M, FT5757M Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS Ta Rating Symbol Condition = 25aC Value Unit


    OCR Scan     		FT5754M, FT5757M FT5757M FT5754M FT5754 FT5754M Pin ft5757 PDF

    FT5764M

    Abstract: FT5764 ft5767m FT57 T-43-25
    Text: FUJITSU MICROELECTRONICS 31E » E3 3 7 4 ^ 2 ODlbbTb T BiFMI Cp January 1990 Edition 1.1 T'-M'IS' FUJITSU PRODUCT PROFILE'- FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS {Ta = 25° C Sym b o l Rating Storage Temperature


    OCR Scan     		D01bfc FT5764M, FT5767M Ta-25 Vcc-30V c/500 FT5764M FT5764 ft5767m FT57 T-43-25 PDF

    FT5753M

    Abstract: FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MI CR OELECTRON ICS 31E » E3 0Qlbbb2 T Q F M I T '-'iZ 'O .s r January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ FT5753M, FT5756M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Ta » 25° C Symbol Rating Storage Temperature T «9 Junction Temperature


    OCR Scan     		FT5753M, FT5756M T-43-25 c/500 FT5753M FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array PDF

    FT5760M

    Abstract: Fujitsu Silicon Darlington Transistor Array FT5760
    Text: FUJITSU MIC RO ELE CTRONICS 31E D □ 374=î?b2 D01bb70 *1 E3FMI January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM U M RATINGS Ta = 2 5 C Sym b o l Rating C o n d itio n V alue U n it - 5 5 ~ +150


    OCR Scan     		D01bb FT5760M -90mA, 300/us FT5760M Fujitsu Silicon Darlington Transistor Array FT5760 PDF

    FT5763M

    Abstract: FT5763 FT5766M Fujitsu Silicon Darlington Transistor Array T-43-25
    Text: 31E D FUJITSU MICROEL ECT RONICS Q 374=57^2 QQlbb74 b Q F M I January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- FT5763M, FT5766M Silicon Darlington Transistor Array FT 5763M , F T 5766M A B SO LU T E M A X IM U M R A T IN G S Rating Ta = 25°C Storage Temperature


    OCR Scan     		001bb74 FT5763M, FT5766M FT5766M 374cJ7b2 001bb7S T-43-25 FT5763M FT5763 Fujitsu Silicon Darlington Transistor Array T-43-25 PDF

    nand gate layout

    Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
    Text: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.


    OCR Scan     		B-2000 IV1B17K J22833 CA95051, D-6000 V2042-819C nand gate layout darlington buffer array B2000 High speed output buffer IC 5V 502-016 PDF

    FT5759M

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5759M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Rating Symbol Condition Value Unit -55 - +1 50 “C T, + 150 °C Collector to Base Voltage VcBO -100 V Emitter to Base Voltage


    OCR Scan     		FT5759M FT5759M PDF

    FT5755M

    Abstract: FT5758M T-43-25 ft5758m DARLINGTON TRANSISTOR ARRAY FT5758 Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MICROELECTRONICS 31E D E3 3 7 4 ci7b5 DDlbbbb 7 B I F M I 'T ' January 1990 Edition 1.1 Füjfrsu PRODUCT P R O FILE- FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Rating Ta s 25 C Symbol Condition Value Unit -5 5 ~ +150


    OCR Scan     		FT5755M, FT5758M T-43-25 Ta-25 FT5755M FT5758M T-43-25 ft5758m DARLINGTON TRANSISTOR ARRAY FT5758 Fujitsu Silicon Darlington Transistor Array PDF

    Untitled

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5786M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Ta = 25°C Sym bol Value C onditions U n it NPN Storage Tem perature T s Junction Tem perature Ti Collector to Base Voltage


    OCR Scan     		FT5786M PDF

    FT5760M

    Abstract: TRANSISTOR A-318
    Text: January 1990 Edition 1.1 — FUJITSU P R O D U C T PR O FILE FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ Rating Ta = 25°C C o ndition Sym bol Storage Tem perature T« 0 Jun ctio n Tem perature T¡ C ollector to Base Voltage


    OCR Scan     		FT5760M FT5760M TRANSISTOR A-318 PDF

    FT5778M

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FTS778M FUJITSU PRODUCT PROFILE Silicon Darlington Transistor Array A B SO LU T E M A X IM U M R A T IN G S Ta = 25°C Rating Symbol Storage Temperature Junction Temperature Collector to Base Voltage Em itter to Base Voltage Collector to Em itter Voltage


    OCR Scan     		FTS778M FT5778M FT5778M PDF

    FT5778M

    Abstract: T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MICRO ELE CTRONICS 31E D E3 374=57^2 DOlbbTD M EIFMI cO '-<v January 1990 Edition 1.1 . — r-".-: —— PRODUCT PROFILE FT5778M Silicon Darlington Transistor Array ABSOLUTE M AXIMUM RATINGS Rating lT a = 2 5°C V alue C o n d itio n s Sy m b o l


    OCR Scan     		FT5778M 13-Pin lc/500 CC--30V FT5778M T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array PDF

    FT5761M

    Abstract: ft5761
    Text: January 1990 Edition 1.1 FUJITSU PR O D U C T P R O FILE FT5761M Silicon Darlington Transistor Array FT5761M ABSOLUTE M AXIMUM RATINGS Rating Ta = 25°C C o ndition Sym bol Storage Tem perature T stg Ju n ctio n Temperature Value U n it -5 5 ~ +150 °C T¡


    OCR Scan     		FT5761M FT5761M ft5761 PDF

    FT5758M

    Abstract: FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY
    Text: Januar/ 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I R a tin g S ym bol S to ra g e T e m p e ra tu re T«g J u n c tio n T e m p e ra tu re T¡ C o n d itio n U n it


    OCR Scan     		FT5755M, FT5758M FT5758M FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY PDF

    ft5764m

    Abstract: FT5764 Fujitsu Silicon Darlington Transistor Array
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. FT5764M, FT5767M Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS R a tin g {T a = 2 5 ° C Sym bol S to ra g e T e m p e ra tu re C o n d itio n V a lu e -55 T *tS J u n c t io n T e m p e ra tu re


    OCR Scan     		FT5764M, FT5767M ft5764m FT5764 Fujitsu Silicon Darlington Transistor Array PDF

    FT5769M

    Abstract: ft5769
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5769M Silicon Darlington Transistor Array A BSO LUTE MAXIMUM RATINGS R a tin g T a = 2 5 ° C Sym bol C o n d itio n V a lu e Cc T «9 J u n c t io n T e m p e ra tu re Ti +150 °C C o lle c to r to Base V o lta g e


    OCR Scan     		FT5769M FT5769M ft5769 PDF

    Fujitsu Silicon Darlington Transistor Array

    Abstract: FT5787M
    Text: January 1990 Edition 1.1 FUJITSU = PRODUCT PROFILE FT5787M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I V a lu e R a tin g Sym bol C o n d itio n s U n it NP N S to ra g e T e m p e ra tu re J u n c tio n T e m p e ra tu re


    OCR Scan     		FT5787M FT5787M Fujitsu Silicon Darlington Transistor Array PDF

    FT5753M

    Abstract: ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array
    Text: January 1990 Edition 1.1 FT5753M, FT5756M FUJITSU - P R O D U C T P R O F IL E Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ R a tin g Ta = 2 5 °C S ym bol S to ra g e T e m p e ra tu re C o n d itio n T *9 J u n c tio n T e m p e ra tu re


    OCR Scan     		FT5753M, FT5756M FT5753M ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array PDF

    FT5763M

    Abstract: FT5763
    Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P RO FILEZ FT5763M, FT5766M Silicon Darlington Transistor Array FT5763M , FT5766M A BSO LUTE MAXIMUM RATINGS R a tin g S to ra g e T e m p e ra tu re V alue -5 5 T- s J u n c tio n T e m p e ra tu re VcBO E m itte r t o Base V o lta g e


    OCR Scan     		FT5763M, FT5766M FT5763M FT5766M FT5763M FT5763 PDF

    Untitled

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE - FT5776M Silicon Darlington Transistor Array A BSO LU TE MAXIMUM RATINGS <Ta = 2 5 ° C V a lu e R a tin g Sym bol C o n d it io n s U n it N PN Sto ra g e T e m p e ra tu re ^stg J u n c t io n T e m p e r a t u r e


    OCR Scan     		FT5776M FT5776M PDF