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Veeder-Root RFXT00 Thermocouple/Rtd Meter, 5Digit; No. Of Digits/Alpha:5; Meter Function:Thermocouple; Meter Range:-; Digit Height:-; Panel Cutout Height:-; Panel Cutout Width:-; Supply Voltage Min:85Vac; Supply Voltage Max:250Vac; Product Range:- \|Veeder Root RFXT00
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RFXT00	Bulk			1	1 $404.42 10 $383.87 100 $383.87 1000 $383.87 10000 $383.87	Buy Now
Master Electronics	RFXT00		1			1 $291.93 10 $265.39 100 $265.39 1000 $265.39 10000 $265.39	Buy Now

FXT00 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UHF TRANSISTOR Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Untitled Abstract: No abstract text available Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE	Original	PDF
uhf 150w mosfet Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
HVV1214-140 Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain	Original	PDF	HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
mode 5 IFF Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
ERJ8GEYJ100V Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V	Original	PDF	HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
transistor SMD 12W MOSFET Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the	Original	PDF	HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w
Untitled Abstract: No abstract text available Text: >LL'&''# &&#;A EVALUATION KIT )&&MWjji"+&L"'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at [email protected]	Original	PDF	HVV1011-300 HVV1011-300-EK 100B101JP500X J153-ND FXT000158 3-252510RS3394 P242393 SCAS-0440-08C ZSLW-004-M SCAS-0440-12M
gsm door lock circuit diagram Abstract: FASTRACK XTEND AT COMMANDS Wavecom FASTRACK AT Commands Wavecom fastrack AT Commands Interface guide for qualcomm umts AT commands FXT001 FASTRACK FXT003 Wavecom Q2686 AT Command FXT003 Wavecom Q2686 Text: Fastrack Xtend User Guide Fastrack Xtend Plug & Play WA_DEV_FEX20_UGD_002 001 November 23, 2009 Fastrack Xtend User Guide Important Notice Due to the nature of wireless communications, transmission and reception of data can never be guaranteed. Data may be delayed, corrupted i.e., have errors or be totally lost. Although significant	Original	PDF
GROUND BASED RADAR Abstract: transistor SMD R1D Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications	Original	PDF	HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D
capacitor 10uF/63V Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
j152 Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7 Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7
capacitor 10uF/63V Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102 Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
J152-ND Abstract: No abstract text available Text: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at [email protected] Contents: - PCB Component Placement Diagram	Original	PDF	HVV1011-600 HVV1011-600-EK 712-1388-1-ND 478-2646-1-ND 399-1222-2-ND 399-1236-2-ND 478-3134-1-ND PCE3484TR-ND HV800 FXT000116 J152-ND

AIRBORNE DME Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with	Original	PDF	HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12