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Vishay Siliconix SIHG23N60E-GE3 MOSFET N-CH 600V 23A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG23N60E-GE3	Tube			500	1 - 10 - 100 - 1000 $2.20112 10000 $2.20112	Buy Now
Bristol Electronics	SIHG23N60E-GE3		175			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SIHG23N60E-GE3		25		2	1 - 10 $2.3296 100 $1.792 1000 $1.792 10000 $1.792	Buy Now
Vishay Intertechnologies SIHG23N60E-GE3 N-CHANNEL 600V - Bulk (Alt: SIHG23N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG23N60E-GE3	Bulk		18 Weeks	500	1 - 10 - 100 - 1000 $2.14609 10000 $2.11308	Buy Now
Mouser Electronics	SIHG23N60E-GE3		292			1 $4.48 10 $3.77 100 $2.83 1000 $2.66 10000 $2.6	Buy Now
TTI	SIHG23N60E-GE3	Tube	2,500		50	1 - 10 - 100 $2.83 1000 $2.67 10000 $2.61	Buy Now
EBV Elektronik	SIHG23N60E-GE3			19 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHP23N60E-BE3 MOSFETs TO220 600V 23A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHP23N60E-BE3		4,690			1 $3.84 10 $3.83 100 $1.79 1000 $1.49 10000 $1.49	Buy Now
Vishay Intertechnologies SIHB23N60E-GE3 MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHB23N60E-GE3		1,010			1 $3.36 10 $3.29 100 $1.77 1000 $1.76 10000 $1.76	Buy Now
Vishay Intertechnologies SIHP23N60E-GE3 MOSFETs 600V Vds 30V Vgs TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHP23N60E-GE3		988			1 $3.51 10 $2.53 100 $1.96 1000 $1.49 10000 $1.45	Buy Now

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G 23N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data	Original	23N60C5 ISOPLUS220TM E72873 20100303c	PDF
23N60 Abstract: E72873 A6014 Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data	Original	23N60C5 ISOPLUS220TM E72873 20100303c 23N60 E72873 A6014	PDF
23N60 Abstract: No abstract text available Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	23N60Q 728B1 123B1 728B1 065B1 23N60	PDF
23N60 Abstract: G 23N60 SiS 961 IXTQ23N60Q 123b1 Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	23N60Q 728B1 123B1 728B1 065B1 23N60 G 23N60 SiS 961 IXTQ23N60Q	PDF
23N60 Abstract: G 23N60 transistor N 343 AD 123B1 Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	23N60Q 250ns O-247 O-268 728B1 123B1 728B1 065B1 23N60 G 23N60 transistor N 343 AD	PDF
Untitled Abstract: No abstract text available Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q-Class = = = 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	23N60Q 250ns O-247 728B1 123B1 728B1 065B1	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23N60C5 ISOPLUS220TM E72873	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23N60C5 ISOPLUS220TM E72873	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23N60C5 ISOPLUS220TM E72873	PDF
23N60 Abstract: 23n60c5 E72873 IXKC23N60C5 18A60 Text: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	23N60C5 ISOPLUS220TM E72873 IXKC23N60C5 20080523a 23N60 23n60c5 E72873 IXKC23N60C5 18A60	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
23N60E Abstract: No abstract text available Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor	Original	MS5F6930 FMR23N60E H04-004-05 H04-004-03 23N60E	PDF
23N60 Abstract: 23N60E Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMR23N60E MS5F6930 H04-004-05 H04-004-03 23N60 23N60E	PDF
23N60E Abstract: 23N60 FMH23N60E electric Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMH23N60E MS5F6929 H04-004-05 H04-004-03 23N60E 23N60 FMH23N60E electric	PDF

23N60ES Abstract: 23N60 Text: DATE CHECKED Sep.-25-'08 CHECKED Sep.-25-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMR23N60ES MS5F7209 H04-004-05 H04-004-03 23N60ES 23N60	PDF
23N60 Abstract: 23N60ES ic MARKING QG FMH23N60E Text: DATE CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMH23N60ES MS5F7208 H04-004-05 H04-004-03 23N60 23N60ES ic MARKING QG FMH23N60E	PDF
SGW23N60UF Abstract: No abstract text available Text: SGW 23N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply	OCR Scan	SGW23N60UF SGW23N60UF	PDF
SGW23N60UFD Abstract: No abstract text available Text: SGW 23N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance CO-PAK, IGBT with FRD : Trr = 42nS (typ.) A P P LIC A TIO N S * * * * AC & DC Motor controls General Purpose Inverters	OCR Scan	SGW23N60UFD SGW23N60UFD	PDF

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G 23N60 Search Results

G 23N60 Price and Stock

Vishay Siliconix SIHG23N60E-GE3

Vishay Intertechnologies SIHG23N60E-GE3

Vishay Intertechnologies SIHP23N60E-BE3

Vishay Intertechnologies SIHB23N60E-GE3

Vishay Intertechnologies SIHP23N60E-GE3

G 23N60 Datasheets Context Search

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23N60

23N60

23N60

23N60

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23N60

7N60B equivalent

23N60E

23N60

23N60E

23N60ES

23N60

SGW23N60UF

SGW23N60UFD