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    Text: S M ELECTRONICS Samsung Microwave Semiconductor F - 0 3 1 1 0 G a in O p t Ì lT I Ì Z G C l GaAs FET 2-14 GHz Description Features The SM F-03110-200 is a packaged version of the SMF03100-200. The chip is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain


    OCR Scan     		F-03110-200 SMF03100-200. SMF-03100-200 G0171Sfl PDF