5N40CL
Abstract: G15N40CLG MGB15N40CL MGP15N40CL G15N40
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N40CL,
MGB15N40CL
O-220
MGP15N40CL/D
5N40CL
G15N40CLG
MGB15N40CL
MGP15N40CL
G15N40
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Untitled
Abstract: No abstract text available
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N40CL,
MGB15N40CL
O-220
1255C)
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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G15N40CL
Abstract: No abstract text available
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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Original
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PDF
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MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
G15N40CL
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Untitled
Abstract: No abstract text available
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N40CL,
MGB15N40CL
MGP15N40CL/D
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G15N40CL
Abstract: G15N40C G15N40 IGBT 50 amp 1000 volt igbt ignition MGB15N40CL MGB15N40CLT4 MGP15N40CL ignition IGBT
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
G15N40CL
G15N40C
G15N40
IGBT 50 amp 1000 volt
igbt ignition
MGB15N40CL
MGB15N40CLT4
MGP15N40CL
ignition IGBT
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MGB15N40CL
Abstract: MGB15N40CLT4 MGP15N40CL G15N40
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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Original
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MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
MGB15N40CL
MGB15N40CLT4
MGP15N40CL
G15N40
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G15N40
Abstract: MGB15N40CL MGB15N40CLT4 MGP15N40CL 440VDC
Text: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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Original
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MGP15N40CL,
MGB15N40CL
r14525
MGP15N40CL/D
G15N40
MGB15N40CL
MGB15N40CLT4
MGP15N40CL
440VDC
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