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    G2 MARKING CODE Search Results

    G2 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    G2 MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si5975DC

    Abstract: Si5975DC-T1
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original
    Si5975DC Si5975DC-T1 S-21251--Rev. 05-Aug-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5975DC Si5975DC-T1 08-Apr-05 PDF

    Si5905DC

    Abstract: Si5905DC-T1 MARKING CODE DB
    Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5905DC Si5905DC-T1 S-21251--Rev. 05-Aug-02 MARKING CODE DB PDF

    Si5904DC

    Abstract: No abstract text available
    Text: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability


    Original
    Si5904DC S-61855--Rev. 04-Oct-99 PDF

    ChipFET

    Abstract: Si5933DC Si5933DC-T1
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5933DC Si5933DC-T1 S-21251--Rev. 05-Aug-02 ChipFET PDF

    Si5903DC

    Abstract: Si5903DC-T1
    Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5903DC Si5903DC-T1 18-Jul-08 PDF

    71054

    Abstract: Si5903DC Si5903DC-T1
    Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5903DC Si5903DC-T1 S-21251--Rev. 05-Aug-02 71054 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5905DC Si5905DC-T1 08-Apr-05 PDF

    Si5975DC

    Abstract: Si5975DC-T1
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


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    Si5975DC Si5975DC-T1 18-Jul-08 PDF

    Si5903DC

    Abstract: Si5903DC-T1
    Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original
    Si5903DC Si5903DC-T1 08-Apr-05 PDF

    Si5905DC

    Abstract: Si5905DC-T1
    Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original
    Si5905DC Si5905DC-T1 18-Jul-08 PDF

    Vishay DaTE CODE 1206-8

    Abstract: No abstract text available
    Text: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability


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    Si5904DC S-61855--Rev. 04-Oct-99 Vishay DaTE CODE 1206-8 PDF

    Si5902DC

    Abstract: Si5902DC-T1
    Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


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    Si5902DC Si5902DC-T1 18-Jul-08 PDF

    Si5902DC

    Abstract: Si5902DC-T1 marking code ca
    Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


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    Si5902DC Si5902DC-T1 S-21251--Rev. 05-Aug-02 marking code ca PDF

    ChipFET

    Abstract: Si5904DC Si5904DC-T1
    Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code


    Original
    Si5904DC Si5904DC-T1 S-21251--Rev. 05-Aug-02 ChipFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original
    Si5902DC S-62424--Rev. 04-Oct-99 PDF

    Si5902DC

    Abstract: No abstract text available
    Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original
    Si5902DC S-62424--Rev. 04-Oct-99 PDF

    DMA364A2

    Abstract: No abstract text available
    Text: DMA364A2 Tentative Total pages page DMA364A2 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : G2 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C


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    DMA364A2 DMA364A2 PDF

    1012S

    Abstract: Q62702-F1627 BF1012S
    Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol


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    1012S Q62702-F1627 OT-143 Jul-29-1996 1012S Q62702-F1627 BF1012S PDF

    f936

    Abstract: Q62702-F936 Silicon N Channel MOSFET Tetrode
    Text: Silicon N Channel MOSFET Tetrode ● BF 995 For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 995 MB Q62702-F936 S SOT-143 D G2 G1 Maximum Ratings Parameter Symbol Values Unit


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    Q62702-F936 OT-143 f936 Q62702-F936 Silicon N Channel MOSFET Tetrode PDF

    BF996

    Abstract: BF996S Q62702-F1021 Silicon N Channel MOSFET Tetrode marking code GL
    Text: Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure BF 996 S Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 996 S MH Q62702-F1021 S SOT-143 D G2 G1 Maximum Ratings


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    Q62702-F1021 OT-143 BF996 BF996S Q62702-F1021 Silicon N Channel MOSFET Tetrode marking code GL PDF

    DB1-822

    Abstract: BF1012
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627


    OCR Scan
    BF1012S 1012S Q62702-F1627 OT-143 800MHz 1012S DB1-822 BF1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UMG2N FMG2A Transistor, digitai, dual, NPN with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMG2N and FMG2A; G2 • package contains two interconnected NPN digital transistors (DTC144EKA)


    OCR Scan
    SC-74A) DTC144EKA) SC-70) SC-59) PDF

    BF963

    Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
    Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values


    OCR Scan
    Q62702-F904 fiS35bQ5 20mS30 6235b05 D270k BB515 270kX BF963 SIEMENS marking siemens MOSFET bf 434 BB515 BF 963 PDF