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    G30N60B Price and Stock

    onsemi HGTG30N60B3

    IGBT 600V 60A 208W TO247
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    DigiKey HGTG30N60B3 Tube
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    Newark HGTG30N60B3 Bulk 80 1
    • 1 $1.32
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    Bristol Electronics HGTG30N60B3 57 2
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    • 100 $2.2999
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    Rochester Electronics LLC HGTG30N60B3

    600 V, NPT IGBT
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    DigiKey HGTG30N60B3 Tube 95
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    onsemi HGTG30N60B3D

    IGBT 600V 60A TO247-3
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    DigiKey HGTG30N60B3D Tube
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    Rochester Electronics LLC HGTG30N60B3_NL

    IGBT, 60A, 600V, N-CHANNEL
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    DigiKey HGTG30N60B3_NL Bulk 51
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    Fairchild Semiconductor Corporation HGTG30N60B3

    600 V, NPT IGBT
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    Rochester Electronics HGTG30N60B3 210 1
    • 1 $3.04
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    • 100 $2.86
    • 1000 $2.58
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    Find more G30N60B price and stock on Findchips.com

    G30N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G30N60B3D Fairchild Semiconductor 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF

    G30N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g30n60

    Abstract: No abstract text available
    Text: G30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The G30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at


    Original     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247 g30n60

    G30N60

    Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
    Text: G30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3D O-247 HGTG30N60B3D 150oC. TA49170. TA49053. G30N60 TA49053 TA49172 TA49170 G30N60B3 G30N60B3D LD26 HGTG30N60b 200pulse

    G30N60B3

    Abstract: G30N60 G30N60B3 hARRIS TA49170 G30N60B
    Text: G30N60B3 S E M I C O N D U C T O R 60A, 600V, UFS Series N-Channel IGBT January 1998 Features Description • 60A, 600V, TC = 25oC The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. 60nts 1-800-4-HARRIS G30N60B3 G30N60 G30N60B3 hARRIS TA49170 G30N60B

    G30N60B3

    Abstract: TA49170
    Text: G30N60B3 Data Sheet April 2013 600 V, NPT IGBT Features The G30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where


    Original     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247 G30N60B3 O-247 G30N60B3 TA49170

    g30n60b3

    Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
    Text: G30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560

    G30N60B3D

    Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: G30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D G30N60 G30N60B3 LD26 TA49053 TA49170 TA49172

    G30N60B3D

    Abstract: HGTG30N60B3D TA49172
    Text: G30N60B3D Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. G30N60B3D TA49172

    g30n60b3

    Abstract: HGTG30N60B3
    Text: G30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. g30n60b3

    G30N60B3D

    Abstract: TA49170 TA49172 HGTG30N60B3D LD26 TA49053
    Text: G30N60B3D Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D TA49170 TA49172 LD26 TA49053

    G30N60B3D

    Abstract: G30N60B3 HGT4E30N60B3DS G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: G30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 E The G30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best


    Original     		PDF HGTG30N60B3D, HGT4E30N60B3DS O-247 HGT4E30N60B3DS 150oC. TA49170. TA49053. O-268AA G30N60B3D G30N60B3 G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172

    g30n60b3

    Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: G30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 HGTG30N60B3D LD26 TA49170

    g30n60b3d

    Abstract: No abstract text available
    Text: G30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3D O-247 HGTG30N60B3D 150oC. TA49170. TA49053. g30n60b3d

    Untitled

    Abstract: No abstract text available
    Text: G30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    G30N60B3

    Abstract: HGTG30N60B3 LD26 TA49170
    Text: G30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 LD26 TA49170

    g30n60b3

    Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
    Text: G30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60

    8508 zener

    Abstract: G30N60b3d TA49172 HGTG30N60B3D LD26 TA49053 TA49170
    Text: G30N60B3D TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oCy 8508 zener G30N60b3d TA49172 LD26 TA49053 TA49170

    g30n60b3

    Abstract: HGTG30N60B3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B
    Text: G30N60B3 TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B

    G30N60

    Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
    Text: in t e G30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC

    g30n60b3

    Abstract: G30N60 TA49170 MOSFET 600v 60a vqe 24 d C110 HGTG30N60B3 LD26 hgtp30n60b3d tr c110
    Text: G30N60B3 in t e r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247ration g30n60b3 G30N60 TA49170 MOSFET 600v 60a vqe 24 d C110 LD26 hgtp30n60b3d tr c110