NN12
Abstract: P35-4211-0 P35-4227-0
Text: P35-4227-0 GaAs MMIC SPDT REFLECTIVE/TERMINATED SWITCH, DC - 6GHz Features • • Broadband performance High Isolation; 40dB typ at 3GHz • Low insertion loss; 0.8dB typ at 3GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical Description
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P35-4227-0
P35-4227-0
P35-4211-0
462/SM/00042/200
NN12
P35-4211-0
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P35-4227-000-200
Abstract: P35-4227-0 GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz NN12
Text: Data sheet GaAs MMIC SPDT Reflective/Terminated Switch, DC - 6GHz Features The P35-4227-000-200 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. The RF outputs can be
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P35-4227-000-200
P35-4227-000-200
462/SM/00042/200
P35-4227-0
GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz
NN12
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GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz
Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 P35-4227-C06-200 P35-4227-C06-300 4227 SPDT NN12
Text: Data sheet GaAs MMIC SPDT Terminated Switch, DC - 6GHz The P35-4227-C06-300 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. A 50 Ω termination is presented
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P35-4227-C06-300
P35-4227-C06-200
463/SM/00128/200
GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
4227
P35-4227-C06-200
4227 SPDT
NN12
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NN12
Abstract: P35-4227-0
Text: P35-4227-0 Marconi Optical Components GaAs MMIC SPDT Reflective/Terminated Switch, DC - 6GHz Features • · · · · Broadband performance High Isolation; 40dB typ at 3GHz Low insertion loss; 0.8dB typ at 3GHz Ultra low DC power consumption Fast switching speed; 3ns typical
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P35-4227-0
P35-4227-0
462/SM/00042/200
NN12
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P35-4227-C06-200
Abstract: NN12
Text: P35-4227-C06-200 Marconi Optical Components GaAs MMIC SPDT Terminated Switch, DC - 6GHz Features • · · · · · Broadband performance High isolation; 32dB typ at 3GHz Low insertion loss; 1.0dB typ at 3GHz Ultra low DC power consumption Fast switching speed; 3ns typical
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P35-4227-C06-200
P35-4227-C06-200
463/SM/00128/200
NN12
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P35-4227-C06-200
Abstract: Marconi NN12
Text: P35-4227-C06-200 GaAs MMIC SPDT TERMINATED SWITCH, DC - 6GHz Features • Broadband performance • High isolation; 32dB typ at 3GHz • • Low insertion loss; 1.0dB typ at 3GHz Ultra low DC power consumption • Fast switching speed; 3ns typical • SO8 surface mount ceramic package
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P35-4227-C06-200
P35-4227-C06-200
463/SM/00128/200
Marconi
NN12
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GaAs MMIC SPDT Switch DC-3GHz
Abstract: EMS101-C
Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY Caution! ESD sensitive device.
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EMS101-C
EMS101-C
50ohm
GaAs MMIC SPDT Switch DC-3GHz
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EMS101-C
Abstract: 100umx100um
Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 09/29/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-C
EMS101-C
50ohm
100umx100um
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Untitled
Abstract: No abstract text available
Text: EMS101-C ISSUED DATE: 07-18-03 PRELIMINARY DATA SHEET DC – 6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EMS101-C
EMS101-C
50ohm
100umx100um.
31dBm
-40oC
-65oC
150oC
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EMS101-C
Abstract: 7371711 DR 25 insertion loss
Text: EMS101-C DATA SHEET Release Date: March 7, 2003 DC-6GHz GaAs MMIC SPDT SWITCH FEATURES l l l l l l l BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-C
EMS101-C
50ohm
100um
100um.
31dBm
-40oC
-65oC
150oC
7371711
DR 25 insertion loss
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EMS101-P
Abstract: No abstract text available
Text: EMS101-P DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-P
EMS101-P
50ohm
ELECTRIC1/2008
31dBm
-40oC
-65oC
150oC
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rf switch spdt
Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz GaAs MMIC SPDT Switch DC 3GHz EMS101-P power rf switch DC-6GHz
Text: EMS101-P DATA SHEET Release Date: March 7, 2003 DC-6GHz GaAs MMIC SPDT SWITCH FEATURES l l l l l l l BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-P
EMA101-P
50ohm
31dBm
-40oC
-65oC
150oC
rf switch spdt
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
GaAs MMIC SPDT Switch DC 3GHz
EMS101-P
power rf switch
DC-6GHz
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Untitled
Abstract: No abstract text available
Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-C
EMS101-C
50ohm
100umx100um.
31dBm
-40oC
-65oC
150oC
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Untitled
Abstract: No abstract text available
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 5MHz to 6000MHz Operation 50 or 75 Applications GND 1 9 VDD 2 8 EN High Isolation: 37dB at 2GHz GND 3 7 CTRL
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RFSW1012
12-Pin,
6000MHz
75dBm
100dBc
41dBmV/ch.
DS140203
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Untitled
Abstract: No abstract text available
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications Low Insertion Loss: 0.30dB at 1980MHz High Isolation: 37dB at 2GHz High IP3: >75dBm at 2GHz
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RFSW1012
12-Pin,
1980MHz
75dBm
100dBc
41dBmV/ch.
DS120821
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RFSW1012TR7
Abstract: RFMD PA LTE DS1303 RFSW1012SQ
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 5MHz to 6000MHz Operation 50 or 75 Applications GND 1 9 VDD 2 8 EN High Isolation: 37dB at 2GHz GND 3 7 CTRL
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RFSW1012
RFSW1012
12-Pin,
6000MHz
1980MHz
75dBm
100dBc
41dBmV/ch.
DS130311
RFSW1012TR7
RFMD PA LTE
DS1303
RFSW1012SQ
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RFSW1012TR7
Abstract: RFSW1012 SW1012-410 SW1012-411 RFMD PA LTE
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50: or 75: Applications Low Insertion Loss: 0.30dB at 1980MHz High Isolation: 37dB at 2GHz High IP3: >75dBm at 2GHz
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RFSW1012
RFSW1012
12-Pin,
6000MHz
1980MHz
75dBm
100dBc
41dBmV/ch.
DS130219
RFSW1012TR7
SW1012-410
SW1012-411
RFMD PA LTE
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Untitled
Abstract: No abstract text available
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 5MHz to 6000MHz Operation 50 or 75 Applications GND 1 9 VDD 2 8 EN High Isolation: 37dB at 2GHz GND 3 7 CTRL
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RFSW1012
12-Pin,
6000MHz
75dBm
100dBc
41dBmV/ch.
DS140418
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rf switch spdt
Abstract: No abstract text available
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 5MHz to 6000MHz Operation 50 or 75 Applications GND 1 9 VDD 2 8 EN High Isolation: 37dB at 2GHz GND 3 7 CTRL
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RFSW1012
RFSW1012
12-Pin,
6000MHz
1980MHz
75dBm
100dBc
41dBmV/ch.
DS120601
rf switch spdt
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PDF
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RFSW1012SQ
Abstract: RF238 RFSW1012PCK-410 RFSW1012 RF-1 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz RFSW1012PCK-411 rf switch spdt
Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 5MHz to 6000MHz Operation 50 or 75 Applications GND 1 9 VDD 2 8 EN High Isolation: 37dB at 2GHz GND 3 7 CTRL
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RFSW1012
RFSW1012
12-Pin,
6000MHz
1980MHz
75dBm
100dBc
41dBmV/ch.
DS120821
RFSW1012SQ
RF238
RFSW1012PCK-410
RF-1
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
RFSW1012PCK-411
rf switch spdt
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SMD transistor M05
Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE
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10/2M
SMD transistor M05
smd TRANSISTOR code m05
wy smd transistor
UPD5740
NE66200
TRANSISTOR m05 smd
UPD5740T6N
UPG2159T6R
SMD transistor M05 driver
50 VOLTS 5 amp smd sot-89 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: '' *41 HITTITE MICROWAVE CORPORATION GaAs MMIC Broadband SPDT Switch HMC108 PRELIMINARY DATASHEET, MAY 1991 Features BANDWIDTH: DC-6GHz LOW INSERTION LOSS: HIGH ISOLATION <0.8dB >30dB General Description Typical Performance The HM C108 chip is a fast, low-loss SPDT
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OCR Scan
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HMC108
HMC107
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HP 4514 v
Abstract: 1GG7-4201 hp 4514 1GG7
Text: What HEWLETT* mLliM PACKARD DC - 6 GHz Unterminated SPDT Switch Technical Data HMMC-2006 Features • Frequency Range: DC-6 GHz • Insertion Loss: <ldB @ 6G H z • Isolation: > 70 dB @ 45 MHz >35dB@ 6G H z • Return Loss: > 12 dB Both Input & Output • Sw itching Speed: < 1 ns
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OCR Scan
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HMMC-2006
27dBm
HMMC-2006
ossl11vs.
HP 4514 v
1GG7-4201
hp 4514
1GG7
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Untitled
Abstract: No abstract text available
Text: -u: v, <4 ^ HITTITE MICROWAVE CORPORATION GaAs MMIC Non-Reflective SPDT Switch HMC104 PRELIMINARY DATA SHEET, MAY 1991 Features BANDWIDTH: LOW INSERTION LOSS: HIGH ISOLATION: DC-6GHz <1dB >40dB Typical Performance General Description °r *1r The HMC104 chip is a fast, broadband
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OCR Scan
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HMC104
HMC104
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PDF
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