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    GB01SHT06 Price and Stock

    Navitas Semiconductor GB01SHT06-CAU

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    Onlinecomponents.com GB01SHT06-CAU
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    Navitas Semiconductor GB01SHT06-CAL

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    GB01SHT06 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB01SHT06-CAU Mil-PRF-19500 GB01SHT06 57E-18 40E-05 12E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB01SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB01SHT06-CAU Characteristics01SHT06 GB01SHT06 57E-18 40E-05 12E-11 00E-10 00E-03

    GB01SHT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB01SHT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GB01SHT06-CAL GB01SHT06-CAL. 05-SEP-2013 GB01SHT06 57E-18 40E-05 12E-11 00E-10 GB01SHT06-CAL SPICE high-temperature-sic-bare-die

    GB01SHT06-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB01SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GB01SHT06-CAU GB01SHT06-CAU. 05-SEP-2013 GB01SHT06 57E-18 40E-05 12E-11 00E-10 GB01SHT06-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB01SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB01SHT06-CAL Mil-PRF-19500 GB01SHT06 57E-18 40E-05 12E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB01SHT06-CAL Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB01SHT06-CAL Characteristics01SHT06 GB01SHT06 57E-18 40E-05 12E-11 00E-10 00E-03