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Catalog Datasheet	MFG & Type	Document Tags	PDF
2N06L Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L Text: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl STD12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1	OCR Scan	STD12N06L 12N05L 12N06L 2N06L 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos	PDF
14N05 Abstract: BR03 TK14N GCJ4360 Text: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STK14N05 STK14N06 STK14N OT-82 OT-194 STK14N05/STK14N06 GC344 14N05 BR03 TK14N GCJ4360	PDF
Untitled Abstract: No abstract text available Text: *57 SGS-THOMSON TYPE STD8N06 STD8N06 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V < 0.25 a 8 A . TYPICAL R DS(on) = 0.21 Cl • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C • LOW GATE CHARGE	OCR Scan	STD8N06 O-251) O-252) O-251 O-252	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON * 5 iL iO M iQ £ I 7 STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 . T Y P IC A L V d ss R D S(on) Id 600 V < 8a 1.9 A R D S (o n ) = 7.2 Q m ± 30V G A TE TO S O U R C E V O LT A G E R ATING . . • . . 100% A V A LA N C H E TE S TE D	OCR Scan	STK2NA60	PDF
2N06 Abstract: 2N05 D12N05 Text: *57 s td i 2N05 SGS-THOMSON i L i O M K I S T D 1 2 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS on Id STD12N05 50 V < 0.15 a 12 A STD12N06 60 V < 0.15 ß 12 A • . . ■ ■ . ■ ■ TYPICAL RDS(on) = 0.1 £2 AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STD12N05 STD12N06 O-251) O-252) O-251 O-252 2N06 2N05 D12N05	PDF
Untitled Abstract: No abstract text available Text: *57 SGS-THOMSON STD6N10 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE STD 6N 10 V dss R D S o n Id 100 V < 0 .4 5 Ü 6 A . • . . • . . ■ TYPICAL R Ds(on) = 0.35 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STD6N10 O-251) O-252) O-251 O-252	PDF
2N06L Abstract: k12n06l K12N05 2N06L 13 STK12N Text: *57 S G S -T H O M S O N ilLHCTIIMDe 2 N osl STK12N06L s t k i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK12N05L STK12N06L V dss R DS on Id 50 V < 0.15 a < 0.15 a 12 A 12 A 60 V • . . ■ ■ . ■ TYPICAL RDS(on) = 0.115 £2	OCR Scan	STK12N06L STK12N05L 2N06L k12n06l K12N05 2N06L 13 STK12N	PDF