IXLK35N120AU1
Abstract: No abstract text available
Text: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous
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35N120AU1
IXLK35N120AU1
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ges rg 58
Abstract: No abstract text available
Text: SEMiX 202GB128D Absolute Maximum Ratings Symbol Conditions IGBT 0 056 8 ":. SEMiX 2 SPT IGBT Modules SEMiX 202GB128D Target Data Features ! " !
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202GB128D
ges rg 58
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Untitled
Abstract: No abstract text available
Text: SEMiX 603GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 3s ' 6 % '( 8. )6 - &(. ) '( 8. )6 - &9( ) & Values Units 1. 95. ('. 8. 1&.
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603GB066HDs
603GAL066HDs
603GAR066HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 603GB066HD . Absolute Maximum Ratings Symbol Conditions IGBT $ $ $#! 4 -6 SEMiX 3 ' 6 % '( 8. )6 - &(. ) '( 8. )6 - &9( ) & Values Units 1. 95. ('. 8. 1&.
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603GB066HD
603GB066HD
603GAL066HD
603GAR066HD
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35N120
Abstract: 35n120 IGBT IXLH35N120A
Text: High Voltage, High speed IGBT IXLH 35N120 A VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES
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35N120
O-247
35n120 IGBT
IXLH35N120A
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IXLH35N140A
Abstract: No abstract text available
Text: High Voltage, High speed IGBT IXLH 35N140 A VCES = 1400 V = 58 A = 3.6 V IC25 VCE sat Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1400 V VGES
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35N140
O-247
IXLH35N140A
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Untitled
Abstract: No abstract text available
Text: APT30GT60KR APT30GT60KR 600V 58A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT30GT60KR
O-220
150KHz
APT30GT60KR
O-220AC
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Untitled
Abstract: No abstract text available
Text: APT30GT60KR 600V 58A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT30GT60KR
O-220
150KHz
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT30GT60BR APT30GT60BR 600V 58A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT30GT60BR
O-247
150KHz
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PDF
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Untitled
Abstract: No abstract text available
Text: APT30GT60KR A dvanced W .A P o w e r Te c h n o l o g y 6o o v 58a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology theThunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT30GT60KR
150KHz
APT30G
T60KR
MIL-STD-750
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage, High speed IGBT IXLH 35N140 A V CES = 1400 V ^C25 = 58 A = 3.6 V v_ Short Circuit S O A C apability Preliminary data °V^S OE Maximum Ratings V CES T j = 25°C to 150°C 1400 V vCGR T j = 25°C to 150°C; RGe = 1 MQ 1400 V V GES Continuous
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35N140
O-247
0DD34Ã
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Untitled
Abstract: No abstract text available
Text: Preliminary SM2G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-EA
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SM2G400US60
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBL1G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-EA • Boost(Step Up) Converter
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SMBL1G400US60
Dissipati00
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBH1G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-EA • Buck(Step Down) Converter
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SMBH1G400US60
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Untitled
Abstract: No abstract text available
Text: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings
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35N120AU1
O-264
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selen-gleichrichter
Abstract: mitteilung aus dem veb rft junost 603 selengleichrichter SERVICE-MITTEILUNGEN KWJ-2-10 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Mitteilung VEB RFT servicemitteilungen GER-A
Text: SERVICE-MITTEILUNGEN VEB IN DUS TR IE V E R TRIE B R U N D F U N K U N D FERNSEHEN IRjRiW 1r a d i o -television j 1 9 8 1 12 SEITE 1 - 4 Mitteilung aus dem VEB Kombinat Rundfunk und Fernsehen / Bereich D Nutzungsdauer von Farbbildröhren verlängern! Fernsehreparaturwerkstatten haben die Möglichkeit, verbrauchte Ka
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Untitled
Abstract: No abstract text available
Text: Preliminary SM2G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-EA
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SM2G400US60
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBH1G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-EA • Buck(Step Down) Converter
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OCR Scan
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SMBH1G400US60
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBL1G400US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-EA • Boost(Step Up) Converter
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SMBL1G400US60
80ins
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PDF
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Untitled
Abstract: No abstract text available
Text: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il
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N100A
25N100
25N1OOA
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10[is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=10A * High Input Impedance îc APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters
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SGP10N60RUF
O-220
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c429 diode
Abstract: No abstract text available
Text: International ^Rectifier Provisional Data Sheet PD-9.1148 IRGKIN075M06 Low conduction loss IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V lc = 75A Vce ON < 2.0V • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGKIN075M06
P100nH
C-430
GG2G220
c429 diode
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CGBT
Abstract: diode c446
Text: Provisional Data Sheet PD-9.1156 H Rectifier IRGTIN075M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses • Short circuit rated Description IR's advanced IGBT technology is the key
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IRGTIN075M06
Outline11
C-446
CGBT
diode c446
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Untitled
Abstract: No abstract text available
Text: : IXYS Prelim inary Data IXSN 80N60A High Current IGBT V ces = ^C25 = 600 V 160 A 3 V ^ C E s a t = Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj = 25 °C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE= 1 600 A v GES Continuous
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80N60A
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