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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V5964 5 .9 —6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC42V5964 is an internally impedance-matched GaAs power FE T especailly designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		GFC42V5964 GFC42V5964 27C102P, RV-15 T-46-13-25 PDF

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445 PDF

    MGFC42V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC42V5964 5 .9 — 6.4GH z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The OUTLINE DRAW ING M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4 20.4 ± 0 .2 0 .8 0 3 + 0.008


    OCR Scan     		MGFC42V5964 MGFC42V5964 15GHz 40GHz 41GHz PDF