82c53
Abstract: 82c53-5
Text: 47E SIEMENS D • 053SbDS GG321b4 AKTIENGESELLSCHAF b M SIEG T 5 H ^ \ SAB 82C53 Programmable CMOS Interval Timer S A B 82C53: Com m and W idth 400 ns S A B 82C53-5: Com m and Width 300 ns • Compatible with all S iem e n s and m ost other m icroprocessors
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053SbDS
GG321b4
82C53
82C53:
82C53-5:
16-bit
24-pin
P-DIP-24
0D321flb
SAB82C53
82c53
82c53-5
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thyristors itt
Abstract: programmable schmitt trigger CA3098 CA309 GG32N circuit diagram of LA 55-P up/IRC 8961
Text: HARRI S SEMICOND SECTOR 4ÜE D H M302271 GG32nD T-7 H A R R I S Ü R E3HAS 53 3 Programmabl e Schmi tt Tr igger - Wi th Memory Du a l- In pu t Precision Level Detectors August 1 9 9 1 Features D escription • Programmable Operating Current The CA3098 Programmable Schmitt Trigger is a
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M302271
GG32nD
CA3098
150mA
CA3098H.
thyristors itt
programmable schmitt trigger
CA309
GG32N
circuit diagram of LA 55-P
up/IRC 8961
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inductive proximity detector ic
Abstract: OM389B metal detectors IC metal detector diagram PI Proximity Detectors for metal detector PROXIMITY inductive ic OM388B inductive proximity detector with transistor metal detector coil DIAGRAM
Text: N AMER PHI LIP S/DISCRETE b'ìE J> • ^53^31 GG327S1 432 I IAPX OM388B OM389B HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proximity detectors in tubular construction, especially the M12 hollow stud. The OM388B is for positive supply voltage and the OM389B is for negative supply
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GG32751
OM388B
OM389B
OM389B
7Z690B4
inductive proximity detector ic
metal detectors IC
metal detector diagram PI
Proximity Detectors for metal detector
PROXIMITY inductive ic
inductive proximity detector with transistor
metal detector coil DIAGRAM
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Untitled
Abstract: No abstract text available
Text: ADV MI CRO MEMORY bME D Q55752Ö GG3211Ö DflM • PRELIMINARY AMD1) a Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit (262,144 x 8-Bit) Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single 3.3 V power supply — Regulated power supply 3.0 V -3 .6 V
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Q55752Ã
GG3211Ã
Am27LV020/Am27LV020B
32-pin
7342A-10
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philips Transistor Equivalent list
Abstract: BDT91 BY239 LFE15600X D0322 374 erie transistor td7
Text: N AUER PHILIPS/DISCRETE b^E T> • bbSBTBl GG3227Ô Ü70 H A P X Philips Semiconductors Product specification NPN silicon planar epitaxial microwave . . power transistor L rE I FEA TU R E S Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors
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GG3227Ã
LFE15600X
philips Transistor Equivalent list
BDT91
BY239
LFE15600X
D0322
374 erie
transistor td7
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 4ÜE D B 43D2271 GG32M20 0 B H A S T HARRIS W ideband Four Quadrant Current Output Analog Multiplier PRELIMINARY August 19 9 1 Description Features • Lo w M ultiplication E r r o r . 1 .5 % • Inp ut B ia s C u rre n t s .
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43D2271
GG32M20
T-73-29
100mV/Div
20ns/Div
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BGY82
Abstract: BGY83 DIN45004B bth 450
Text: tib S S T B l Philips Semiconductors GG323bG fill H i A PX Product specification BGY82;BGY83 CATV amplifier modules N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING -SOT115C DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input
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00323bQ
BGY82
BGY83
-SOT115C
MSB004
G03E3ti2
BGY82
BGY83
DIN45004B
bth 450
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uhf tv booster circuit diagram
Abstract: MSA33S
Text: AMER PHI LI PS /D IS CR ET E b^E » • ^53=131 GG32SSÔ TES « A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2081/60 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thirvfilm substrate. The device is intended for use
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GG32S5Ã
OM2081/60
MSA33S
uhf tv booster circuit diagram
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OM370
Abstract: uhf tv booster circuit diagram OM370A philips om370 philips ferrite core 4b1 113dBuV philips if catv amplifier HYBRID V.H.F./U.H.F. AMPLIFIER
Text: N AMER PHILIPS/DISCRETE blE D • bbS3*i31 GG32450 flS3 * A P X U M d/U HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M A T V and C A T V systems, and as
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GG32450
OM370
uhf tv booster circuit diagram
OM370A
philips om370
philips ferrite core 4b1
113dBuV
philips if catv amplifier
HYBRID V.H.F./U.H.F. AMPLIFIER
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82C54-2-P
Abstract: No abstract text available
Text: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes
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235b05
0G321ff
82C54
82C54
82C54-2
16-bit
82C54-2)
24-pin
P-DIP-24)
82C54-2-P
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ca555
Abstract: CA555C LIMING RELAY LM555C MC1555 harris SE555 CA555 DIP MC1455 NE555 SE555
Text: HA R R I S S E M I C O N D S E C T O R 4GE D • M 3 0 2 2 7 1 D D 3 S 3 3 4 7 ■ HAS T 1 } H a r r i s C A 5 5 5 , C L A M 5 5 5 5 C 5 5 C , * Timers For Timing Delays & Oscillator Applications in Commercial, Industrial & Military Equipment August 1991 Features
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CA555,
CA555C,
LM555C*
200mA
SE555,
NE555,
MC1555,
MC1455
ca555
CA555C
LIMING RELAY
LM555C
MC1555
harris SE555
CA555 DIP
MC1455
NE555
SE555
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-47E Series TMP47C241 CMOS 4-Bit Microcontroller The 47C241 has 8-bit A/D converter, watchdog timer and serial interface based on the TLCS-47 series. TMP47C241N, TMP47C241M Part N o . ROM RAM 2048 x 8-bit 128 x 4-bit TM P 47C 241N TM P 47C 241M
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TLCS-47E
TMP47C241
47C241
TLCS-47
TMP47C241N,
TMP47C241M
SDIP28
S0P28
BM47214A
BM1152
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-900 Series TMP96C031N/F CMOS 16-bit Microcontrollers TMP96C031N/TMP96C031F 1. Outline and Device Characteristics The TMP96C031 are high-speed advanced 16-bit microcon trollers developed for controlling medium to large-scale equip ment. TMP96C031N comes in a 64-pin shrink DIP; the
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TLCS-900
TMP96C031N/F
16-bit
TMP96C031N/TMP96C031F
TMP96C031
TMP96C031N
64-pin
TMP96C031F,
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Untitled
Abstract: No abstract text available
Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase
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HN29WT800/HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
HN29WT800
HN29WB800
8-bit/512-kword
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rbbb
Abstract: No abstract text available
Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416V254DJ
256Kx16
DQ0-DQ15
rbbb
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Untitled
Abstract: No abstract text available
Text: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56SW864ES-6/7
608-word
64-bit
ADE-203-776A
HB56SW864ES
HB56SW
864ES
16-Mbit
HM51W16405)
16-bit
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cd 7522 cs
Abstract: No abstract text available
Text: K A 7 5 3 1D Industrial ELECTRONICS BALLAST CONTROL 1C 22 SDIP The KA7531X is a ballast control IC improving power-factor.t The following is the features incorporated in it. It includes PFC control block so that the power-factor can be over 0.99 % and the high voltage at lamp driving block
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KA7531X
KA7521
KA7524
KA7531
7531D
00327bfi
22-S0P-300
24-SOP-300
cd 7522 cs
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Untitled
Abstract: No abstract text available
Text: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6,1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56UW3273
33554432-word
72-bit
ADE-203-653
HB56UW3273E
64-Mbit
HM5165405ATT)
16-bit
74LVT16244)
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mb 8719
Abstract: 004II
Text: Lucent Technologies Bell Labs Innovations FW100S4R0 and FW150S4R0 Power Modules: dc-dc Converters; 36 to 72 Vdc Input, 4 Vdc Output; 80 W to 120 W Features • Wide input range ■ High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FW100S4R0
FW150S4R0
FW100S4R09
FW150S4R09
005002b
mb 8719
004II
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ADAPT29K
Abstract: No abstract text available
Text: AD VA N C E D MI CRO DEVICES SflE D • 02S7S25 G032727 7 ■ Am29000 Advanced Micro Devices Streamlined Instruction Processor This amendment adds advanced information commercial AC specifications for 3 3 -M H z Am 29000 . Am29000 is a trademark of Advanced Micro Devices, Inc.
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02S7S25
G032727
Am29000
CGX169
T-90-20
00331S1
CQ164
ADAPT29K
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am29f010
Abstract: No abstract text available
Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands
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Am29F010
32-pin
Am29F040
02S7S2A
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Untitled
Abstract: No abstract text available
Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase
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32-Pin
Am28F512
28F5l
Am28F512-75
02S752A
QD32bbS
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philips ferrite 4b1
Abstract: philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
Text: bbS3^31 Philips Semiconductors DG324T2 205 ^HAPX Product specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology
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bbS3131
OM2063
philips ferrite 4b1
philips ferrite core 4b1
2G2 capacitor
philips 4b1 ferrite
uhf vhf booster
WEA199
vHF amplifier module
OM2063
3s4t
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CLV044
Abstract: 56497
Text: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to
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Am27C1024
16-Bit)
40-Pin
44-Pin
8M-7/94-0
06780H
0ES755Ã
CLV044
56497
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