GM72V66441
Abstract: No abstract text available
Text: GM72V66441ET/ELT 4,194,304 W O R D x 4 B I T x 4 B A N K SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66441ET/ELT
GM72V66441ET/ELT
PC133/PC100/PC66
143MHz
133MHz
125MHz)
PC100
143/133/125/100MHz
GM72V66441
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Untitled
Abstract: No abstract text available
Text: GM72V66441ET/ELT 4,194,304 WORD x 4 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66441ET/ELT
GM72V66441ET/ELT
BA0/A13
BA1/A12
TTP-54D)
TTP-54D
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Untitled
Abstract: No abstract text available
Text: G M 7 2 V 6 6 4 4 1 E T /E L T 4 , 194 ,304 w o r d x 4 b i t x 4 b a n k L G S e m ic o n C o .,L td . SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including
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GM72V66441ET/ELT
BA0/A13
BA1/A12
PC133/PC100/PC66
143MHz
133MHz
125stop
V66441ET/ELT
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Untitled
Abstract: No abstract text available
Text: Preliminary GM72V66441ET/ELT L G S e m i e o n C o « ,L td « 2,097,152 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including
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GM72V66441ET/ELT
GM72V66441ET/ELT
BA0/A13
BA1/A12
43nce
TTP-54D)
TTP-54D
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Untitled
Abstract: No abstract text available
Text: GM72V66441E L T 16Mx4-blt, 4K Ref., 4Banks, 3.3V GM 7 2 V 6 6 4 4 1ET/E L T dynamic random 67,1 0 8 . 8 6 4 access memory is a m emory cells and synchronous com prised logic vcc □= of NC including by r e f e r r i n g to the p o s i ti v e e d g e o f the e x t e r n a l l y
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GM72V66441E
16Mx4-blt,
66441E
64M-bit
72V66441ET/ELT
TTP-54D)
TTP-54D
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a42e
Abstract: No abstract text available
Text: L ix S e m k M C o*,Lf.d, Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally
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GM72V66441ET/ELT
BA0/A13
TTP-54D)
a42e
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Untitled
Abstract: No abstract text available
Text: Preliminary GM72V66441ET/ELT 4 , 194,304 w o r d x 4 b i t x 4 b a n k L G S e m i c o n C o « ,L td « SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including
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GM72V66441ET/ELT
GM72V66441ET/ELT
TTP-54D)
TTP-54D
0-53g
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Untitled
Abstract: No abstract text available
Text: G M 7 2 V 6 6 4 4 1 E T /E L T 2 m i n WQRD x 8 BIT x 4 BANK LG Semicon Co.,Ltd. SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66441ET/ELT
BA0/A13
BA1/A12
V66441ET/ELT
TTP-54D)
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1gb pc133 SDRAM DIMM 144pin
Abstract: 54-PIN PC100 gm72v66841
Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
1gb pc133 SDRAM DIMM 144pin
54-PIN
PC100
gm72v66841
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