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SK Hynix Inc GM72V66841ET-7K IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
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GM72V66841ET Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GM72V66841ET		Hynix Semiconductor	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM		Original	PDF
GM72V66841ET-7		Hynix Semiconductor	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM		Original	PDF
GM72V66841ET-7K		Hynix Semiconductor	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM		Original	PDF

GM72V66841ET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GM72V66841ET Abstract: No abstract text available Text: GM72V66841ET/ELT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously	Original	GM72V66841ET/ELT GM72V66841ET/ELT BA0/A13 BA1/A12 TTP-54D) TTP-54D GM72V66841ET	PDF
2272 decoder Abstract: GM72V66841ET EIAJ lcdd lpec1 Text: GM72V66841ET/ELT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously	Original	GM72V66841ET/ELT GM72V66841ET/ELT PC133/PC100/PC66 143MHz 133MHz 125MHz) PC100 143/133/125/100MHz 2272 decoder GM72V66841ET EIAJ lcdd lpec1	PDF
Untitled Abstract: No abstract text available Text: L i* GM72V66841ET/ELT S e m t o i i C o * , L i d , Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally	OCR Scan	GM72V66841ET/ELT GM72V66841ET/ELT TTP-54D)	PDF
Untitled Abstract: No abstract text available Text: Preliminary GM72V66841ET/ELT L G S e m i e o n C o « ,L td « 2,097,152 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including	OCR Scan	GM72V66841ET/ELT GM72V66841ET/ELT PC100 TTP-54D) TTP-54D 0-53g	PDF
3DA93D Abstract: GM72V66841ET q649 TTP-54D Text: Preliminary GM72V66841ET/ELT L G S e m ic o n C o«,L td« Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally	OCR Scan	GM72V66841ET/ELT GM72V66841ET/ELT PC133/PC100/PC66 143MHz 133MHz 125MHz) 143/133/125/100MHz 3DA93D GM72V66841ET q649 TTP-54D	PDF
Untitled Abstract: No abstract text available Text: LG Semicon C o.,Ltd. GM72V66841ET/ELT 2m i n WQRD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously	OCR Scan	GM72V66841ET/ELT GM72V66841ET/ELT BA0/A13 BA1/A12 V66841ET/ELT TTP-54D)	PDF
1gb pc133 SDRAM DIMM 144pin Abstract: 54-PIN PC100 gm72v66841 Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh	OCR Scan	200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841	PDF
AZI085S-3.3EI Abstract: No abstract text available Text: GM72V66841E L T 8Mx8-bit, 4 K R e f„ 4Banks, 3.3V The G M 72V 66841ET /EL T provides four banks o f 2 ,0 9 7 ,1 5 2 w o rd b y 8 b it to r e a liz e h ig h b an d w id th w ith the C lock freq u en cy up to 143 M hz. v c c CH DQ0 C H v c c o rr * PC 133/PC 100/PC66 C om patible	OCR Scan	GM72V66841E 66841ET GM72V66841ET/ELT TTP-54D) TTP-54D AZI085S-3.3EI	PDF