GT20G101
Abstract: No abstract text available
Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G101
2-10S2C
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GT20G101
Abstract: No abstract text available
Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G101
2-10S1C
GT20G101
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GT20G101
Abstract: No abstract text available
Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G101
2-10S1C
GT20G101
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igbt flash
Abstract: GT20G102
Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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Original
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GT20G102
2-10S1C
igbt flash
GT20G102
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Untitled
Abstract: No abstract text available
Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
10S1C
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PDF
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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Original
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GT20G102
2-10S2C
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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Original
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GT20G101
10S2C
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •
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OCR Scan
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GT2QG102
GT20G102
2-10S2C
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive
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OCR Scan
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GT20G102
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode
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OCR Scan
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GT20G101
TcS70Â
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Untitled
Abstract: No abstract text available
Text: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive
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OCR Scan
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GT20G101
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PDF
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cs7e
Abstract: No abstract text available
Text: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode •
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OCR Scan
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GT20G102
2-10S2C
cs7e
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Untitled
Abstract: No abstract text available
Text: GT20G10KSM TOSHIBA TO SH IBA IN SULATED GATE BIPOLAR TRAN SISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V cE (sat) = 8V (Max.) (Ic = 130A) Enhancement-Mode
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OCR Scan
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GT20G10KSM)
2-10S2C
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL MOS TYPE GT20G10KSM — STROBE FLASH APPLICATIONS Unit in mn 1Q.3MAX . High Input Impedance 5.0 . Low Saturation Voltage : VcE sat)=8V(Max.)(Ic=130A) . Enhancement-Mode 0.1 . 20V Gate Drive - r ¥JlHL y 2.54± 0.25 2 54±0.25 HAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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GT20G10KSM)
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GT20
Abstract: GT20G101
Text: TOSHIBA GT20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 1 SM) STROBE FLASH APPLICATIONS Unit in mm High Input Impedance Low Saturation Voltage : V qe (sat) = 8V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive
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OCR Scan
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GT20G101
2-10S2C
GT20
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LE20A
Abstract: No abstract text available
Text: GT20G102 SM T O S H IB A T O S H IB A IN SU LATED G ATE B IP O LA R TRA N SISTO R SILICON N-CHANNEL IG BT GT20G102(S M) STR O BE FLASH A PPLIC A TIO N S • • • • H igh Input Im pedance Low Saturation V oltage Enhancem ent-M ode 12V Gate Drive : V C E (sat) = 8V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
GT20G10
2-10S2C
LE20A
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VcE sat = 8-OV (Max.) (IC = 130A)
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OCR Scan
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GT20G102
-I-19V
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT fi T ? n fi 1 n i Unit in mm STROBE FLASH APPLICATIONS 10.3MAX • • • • High Input Impedance Low Saturation Voltage : V j e (5at = 8V (Max.) (Iq = 130A) Enhancement-Mode
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OCR Scan
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GT20G102
2-10S1C
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G101 SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in mm 10.3MAX . High Input Impedance - Low Saturation Voltage : VcE sat =8V(Itax. ) (Ic=130A) . Enhancement-Mode . 20V Gate Drive 1.6 MAX 0.76 MAXIMUM RATINGS (Ta-25°C) SYMBOL CHARACTERISTIC
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OCR Scan
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GT20G101
Ta-25
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PDF
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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OCR Scan
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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PDF
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vqe 24 d
Abstract: GT20G102 vqe 208 e
Text: T O S H IB A GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive : VCE sat = 8.0V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
vqe 24 d
GT20G102
vqe 208 e
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PDF
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AFC5
Abstract: No abstract text available
Text: GT20G101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT riT ?n riim Unit in mm STROBE FLASH APPLICATIONS 10.3MAX • • • • 1.32 5.0 High Input Impedance Low Saturation Voltage : Vq e sat = ^V (Max.) (Iq = 130A) Enhancement-Mode
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OCR Scan
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GT20G101
AFC5
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PDF
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TO SHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 2 ( S M) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 130A) Enhancement-Mode
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OCR Scan
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GT20G102
GT20G10
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 130A)
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OCR Scan
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GT20G102
GT20G1
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PDF
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