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    GT50J322 Search Results

    GT50J322 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT50J322 Toshiba TRANS IGBT CHIP N-CH 600V 50A 3(2-21F2C) Original PDF
    GT50J322 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT50J322 Toshiba Silicon N-channel MOS type insulated gate bipolar transistor the 4th generation current resonance inverter switching applications Original PDF
    GT50J322 Toshiba Discrete IGBTs Original PDF
    GT50J322 Toshiba Discrete IGBTs Original PDF
    GT50J322(Q) Toshiba GT50J322 - Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) Original PDF

    GT50J322 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GT50J322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		GT50J322 GT50J322 PDF

    gt50j322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		GT50J322 gt50j322 PDF

    IC-50A

    Abstract: GT50J322 2-21F2C
    Text: GT50J322 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J322 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf=0.25 s 標準 (IC=50A)


    Original     		GT50J322 2-21F2C 20070701-JA IC-50A GT50J322 2-21F2C PDF

    2-21F2C

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed z Low saturation voltage


    Original     		GT50J322 2-21F2C 2-21F2C PDF

    Untitled

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25 s Typ. (IC = 50A)


    Original     		GT50J322 PDF

    GT50J322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		GT50J322 GT50J322 PDF

    GT50J322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25 s Typ. (IC = 50A)


    Original     		GT50J322 GT50J322 PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    GT50J101

    Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
    Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive


    Original     		PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    induction cooker circuit diagram

    Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
    Text: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3


    Original     		SCE0013D induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 PDF

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    dh 1117

    Abstract: No abstract text available
    Text: TOSHIBA GT50J322 T O S H IB A IN S U L A T E D GATE BIPO LAR T R A N SISTO R SILICO N N C H A N N E L M O S TYPE GT50J322 Unit in mm TH E 4 T H G E N E R A T IO N C U R R EN T RESO NA NCE INVERTER S W IT C H IN G A P P L IC A T IO N S • • • • FRD Included Between Emitter and Collector


    OCR Scan     		GT50J322 ic1998 dh 1117 PDF

    GT50J322

    Abstract: LRR40
    Text: TO SH IBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR THE 4TH GENERATION SILICON N CHANNEL MOS TYPE GT50J322 Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf=0.25/*s Typ. (l£ = 50A)


    OCR Scan     		GT50J322 GT50J322 LRR40 PDF

    IC IL 1117

    Abstract: im 1117 1117 S 3,3 Transistor 1117 S Transistor
    Text: TO SHIBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 THE 4TH GENERATION U n it in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf= 0 .2 5 //s Typ. (Iq = 50A)


    OCR Scan     		GT50J322 IC IL 1117 im 1117 1117 S 3,3 Transistor 1117 S Transistor PDF

    GT50J322

    Abstract: No abstract text available
    Text: TOSHIBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf=0.25/*s Typ. (l£ = 50A)


    OCR Scan     		GT50J322 GT50J322 PDF