MIC4102YM TR
Abstract: buck converter 110v to 100 MIC4102 IC MOSFET QG PUSH PULL MOSFET DRIVER ultrasonic driver MIC4102BM MIC4102YM MIC4103 converter 11uA for TTL
Text: MIC4102 100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection PRELIMINARY SPECIFICATIONS General Description Features The MIC4102 is a high frequency, 100V Half Bridge MOSFET driver IC featuring internal anti-shoot-through protection. The low-side and high-side gate drivers are
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MIC4102
MIC4102
M9999-112806
MIC4102YM TR
buck converter 110v to 100
IC MOSFET QG
PUSH PULL MOSFET DRIVER
ultrasonic driver
MIC4102BM
MIC4102YM
MIC4103
converter 11uA for TTL
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Untitled
Abstract: No abstract text available
Text: ITC135P Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mA V mA - The ITC135’s optocoupler provides for half-wave
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ITC135P
ITC135â
16-pin
3750Vrms
DS-ITC135P-R04
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Full-Wave Bridge Rectifier
Abstract: 10PA ITC135 ITC135P ITC135PTR J-STD-033
Text: ITC135P Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mA V mA - The ITC135’s optocoupler provides for half-wave
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ITC135P
ITC135
16-pin
3750Vrms
DS-ITC135P-R04
Full-Wave Bridge Rectifier
10PA
ITC135P
ITC135PTR
J-STD-033
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IX21844
Abstract: No abstract text available
Text: IX21844 High Voltage Half-Bridge Gate Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- Source/Sink VBIAS Description Rating Units 600 V 1.4 / 1.8 A 10-20 V The IX21844 is a high voltage IC that can drive high speed MOSFETs and IGBTs that operate up to
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IX21844
IX21844
DS-IX21844-R01
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IRGTI090U06
Abstract: IGBT 75 D
Text: Alternation^ Sor]Rectifier PD'"Í4B IRGTI090U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT Half-Bridge VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI090U06
C-824
IRGTI090U06
IGBT 75 D
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9956B
Abstract: c832 c836 diode c832 IRGTI140U06 DIODE 2FL C834 power
Text: PD-9.956B kitemational [tor]Rectifier IRGTI140U06 "HALF-BRIDGE“ IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ‘tail"
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25KHz
100KHz
IRGTI140U06
C-836
9956B
c832
c836
diode c832
IRGTI140U06
DIODE 2FL
C834 power
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IRGTI200F06
Abstract: No abstract text available
Text: bitemational ^Rectifier PD-9.968B IRGTI200F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses Description
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10KHz
50KHz
IRGTI200F06
IRGTI200F06
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IRGTI165F06
Abstract: No abstract text available
Text: PD9.959B International HRectifier IRGTI165F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design .Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses lc = 165A
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10KHz
50KHz
IRGTI165F06
100nH
IRGTI165F06
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C818
Abstract: rq20 C814 c815
Text: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI050U06
C-817
C-818
C818
rq20
C814
c815
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tr c828
Abstract: tr c828 c829 C828 transistors tr c829 c829 c828 C-828 IRGTI115U06 c826
Text: kïtemational goi Rectifier PD'99558 IRGTI115U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI115U06
C-829
C-830
tr c828
tr c828 c829
C828 transistors
tr c829
c829
c828
C-828
IRGTI115U06
c826
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C818
Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Text: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"
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IRGTI050U06
C-817
46554S2
C-818
Mfl5545£
0Q20LÜ
C818
st c817
C817
st c816
C814
irgti050u06
c816
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c214 diode
Abstract: IRGTI065F06 957B C-218 D-16 bsk 45
Text: International S Rectifier PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant »Switching-Loss Rating includes all "tail“ losses Vœ = 600V
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IRGTI065F06
10KHz
50KHz
applicatiRGTI065F06
100nH
C-218
c214 diode
IRGTI065F06
957B
D-16
bsk 45
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WE VQE 11 E
Abstract: DIODE 65A IRGT1065F06 FF1000
Text: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A
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IRGTI065F06
10KHz
50KHz
C-218
4ASS452
WE VQE 11 E
DIODE 65A
IRGT1065F06
FF1000
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DIODE C817
Abstract: IRGTI050U06 C813 C818 C817 DIODE C813
Text: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
C-817
IRGTI050U06
C-818
DIODE C817
C813
C818
C817
DIODE C813
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C828 transistors
Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Text: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"
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IRGTI115U06
25KHz
100KHz
C-829
100nH
0020b20
C-830
C828 transistors
c828
tr c828
tr c828 c829
c829
tr c829
c828 02
diode c829
c826
C825 diode
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DIODE C817
Abstract: DIODE C813 953B IRGTI050U06 C814 C817 C813
Text: International ï «k Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed 1GBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 2 5K H z hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
supplies817
IRGTI050U06
10OnH
C-818
DIODE C817
DIODE C813
953B
C814
C817
C813
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Untitled
Abstract: No abstract text available
Text: International S I Rectifier PD-9.958B IRGTI120F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50K H z resonant • Switching-Loss Rating includes all "tail"
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10KHz
IRGTI120F06
C-223
100nH
C-224
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ic laf 0001
Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
Text: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses
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IRGTI200F06
10KHz
50KHz
applicationI200F06
100nH
C-236
ic laf 0001
LAF 0001
laf 0001 power
IR LFN
IRGTI200F06
200A 600V FET
2S0240
50PCL
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IRGTI090U06
Abstract: c823 1C00 954B C824 c821 ls IRGT1090U06 apak
Text: International Hü Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT V c e = 600V .Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant .Switching-Loss Rating includes all "tail"
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IRGTI090U06
25KHz
100KHz
C-823
IRGTI090U06
100nH
10-1NT-A-PAK
C-824
c823
1C00
954B
C824
c821 ls
IRGT1090U06
apak
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transistors c216
Abstract: No abstract text available
Text: International ItorIRectifier P D -9.957B IRGTI065F06 Fast Speed IG BT "HALF-BRIDGE" IG B T IN T-A -P A K »Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses
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50KHz
IRGTI065F06
C-217
C-218
transistors c216
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Diode C219
Abstract: fast recovery diode 600v 120a 958B IRGTI120F06 DIODE 47N DIODE RG
Text: International [ï«r!Rectifier PM95aB IRGTI120F06 "HALF-BRIDGE" IG BT INT-A-PAK Fast Speed IG BT V CE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail”
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IRGTI120F06
10KHz
50KHz
C-223
IRGTI120F06
C-224
Diode C219
fast recovery diode 600v 120a
958B
DIODE 47N
DIODE RG
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Diode C219
Abstract: resistance 220 ohm diode 1n6
Text: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
su513
IRGTI120F06
100nH
C-224
Diode C219
resistance 220 ohm
diode 1n6
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958b
Abstract: AS36 IFR 740 IRGTI120F06
Text: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
C-224
0DEDD14
958b
AS36
IFR 740
IRGTI120F06
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IRGTI165F06
Abstract: c227 diode c230 diode
Text: PO9.950B biternational Rectifier IRGTI165F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • R u g ged Design •S im p le g ate-d rive .F a s t operation up to 1 0 K H z hard switching, or 5 0 K H z resonant .S w itch in g -L o s s Rating includes all “tail"
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IRGTI165F06
10KHz
50KHz
IRGTI165F06
100nH
C-230
S5452
002DG2Q
c227 diode
c230 diode
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