Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HAT2129H Search Results

    HAT2129H Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2129H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 30A 7.5Mohm Lfpak Visit Renesas Electronics Corporation
    SF Impression Pixel

    HAT2129H Price and Stock

    Renesas Electronics Corporation HAT2129H-EL-E

    (Alt: HAT2129H-EL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia HAT2129H-EL-E 18 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HAT2129H Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT2129H Renesas Technology Silicon N-Channel MOS FET Original PDF
    HAT2129H Renesas Technology MOSFET, Switching; VDSS (V): 40; ID (A): 30; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3200; toff ( us) typ: 0.067; Package: LFPAK Original PDF
    HAT2129H-EL-E Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF

    HAT2129H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2129H

    Abstract: ADE-208-1577B
    Text: HAT2129H Silicon N Channel Power MOS FET Power Switching ADE-208-1577B Z Preliminary 3rd. Edition Aug. 2002 Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V)


    Original     		PDF HAT2129H ADE-208-1577B D-85622 D-85619 HAT2129H

    HAT2129H

    Abstract: No abstract text available
    Text: HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0400Z Previous ADE-208-1577B(Z Rev.4.00 Jun.23.2003 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V)


    Original     		PDF HAT2129H REJ03G0049-0400Z ADE-208-1577B HAT2129H

    HAT2129H

    Abstract: HAT2129H-EL-E
    Text: HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0500 Rev.5.00 Sep 20, 2005 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A)


    Original     		PDF HAT2129H REJ03G0049-0500 PTZZ0005DA-A) HAT2129H HAT2129H-EL-E

    HAT2129H

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    HAT2129H-EL-E

    Abstract: HAT2129H
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as