HD74LS08P
Abstract: data sheet HD74LS08P HD74LS08P application notes HD74LS08 HD74LS08FPEL HD74LS08RPEL PRDP0014AB-B PRSP0014DE-A PRSP0014DF-B making 865
Text: HD74LS08 Quadruple 2-Input Positive AND Gates REJ03D0394–0200 Rev.2.00 Feb.18.2005 Features • Ordering Information Part Name Package Type Package Code Previous Code Package Abbreviation Taping Abbreviation (Quantity) HD74LS08P DILP-14 pin PRDP0014AB-B
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HD74LS08
REJ03D0394
HD74LS08P
DILP-14
PRDP0014AB-B
DP-14AV)
HD74LS08FPEL
OP-14
PRSP0014DF-B
FP-14DAV)
HD74LS08P
data sheet HD74LS08P
HD74LS08P application notes
HD74LS08
HD74LS08FPEL
HD74LS08RPEL
PRDP0014AB-B
PRSP0014DE-A
PRSP0014DF-B
making 865
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HAF2001
Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Text: HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0600 Previous: ADE-208-353D Rev.6.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2001
REJ03G1134-0600
ADE-208-353D)
PRSS0004AC-A
HAF2001
HAF2001-90
HD74LS08
PRSS0004AC-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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HD74LS08
Abstract: REJ03G1139-0300 HAF2012 PRSS0004AE-A HAF2012-90
Text: HAF2012 L , HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0300 (Previous: ADE-208-677A) Rev.3.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2012
REJ03G1139-0300
ADE-208-677A)
HD74LS08
REJ03G1139-0300
PRSS0004AE-A
HAF2012-90
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Hitachi DSA002749
Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over
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HAF2001
220AB
D-85622
Hitachi DSA002749
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HD74LS08
Abstract: HAF2001 Hitachi DSA0073
Text: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down
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HAF2001
220AB
HD74LS08
HAF2001
Hitachi DSA0073
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HAF2012-90
Abstract: HAF2012 HD74LS08 PRSS0004AE-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HAF2001
Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Text: CONTENTS • Index. 4 ■ General Information.
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PM50150K
31Max
2SK2225
2sj150
2sk1058
2SK215 equivalent
2sk135 application note
2SK975 equivalent
2SK2416
2sk135 audio application
2SK135 audio amplifier
2SK2225 equivalent
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HAF2001
Abstract: HD74LS08 DSA003641
Text: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353D Z 5th. Edition Mar. 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
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HAF2001
ADE-208-353D
220AB
HAF2001
HD74LS08
DSA003641
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HAF2002
Abstract: HAF2002-90 HD74LS08 PRSS0003AD-A
Text: HAF2002 Silicon N Channel MOS FET Series Power Switching REJ03G1135-0300 Previous: ADE-208-503A Rev.3.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2002
REJ03G1135-0300
ADE-208-503A)
PRSS0003AD-A
HAF2002
HAF2002-90
HD74LS08
PRSS0003AD-A
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HAF2001
Abstract: HD74LS08
Text: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353 D Z 5th. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
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HAF2001
ADE-208-353
220AB
HAF2001
HD74LS08
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hitachi j50
Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
hitachi j50
2SK1168
HA16116 "cross reference"
TRANSISTOR MARKING YB 826
ADE-408
GG 84
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2sk1058 2SJ162
2sj177
2SJ182 equivalent
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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74ls74apc
Abstract: HD74ls04p 74LVC1G04ady8 semiconductor AZ431BZ-AE1 HCF4060BE HEF4093BP datasheet free download ne5334 hd74hc132p dm74ls47n
Text: Standard Linear and Logic Products Cross-Reference Introduction Notice This Standard Linear and Logic Products CrossReference will assist in finding a device made by Texas Instruments that is a drop-in or similar replacement to many of our competitors’ standard linear and logic products.
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HAF2001
Abstract: HD74LS08
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HAF2012-90
Abstract: HAF2012 HD74LS08 PRSS0004AE-A
Text: HAF2012 L , HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
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HAF2012
REJ03G1139-0400
PRSS0004AE-A
HAF2012-90
HD74LS08
PRSS0004AE-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do-900
Unit2607
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Hitachi DSA002759
Abstract: No abstract text available
Text: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down
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HAF2001
220AB
220AB
Hitachi DSA002759
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HD74LS08
Abstract: HAF2002 HAF2002-90 PRSS0003AD-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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