HEAF
Abstract: No abstract text available
Text: COUPLER 90˚ HYBRID 200 WATT DATA SHEET SHEET 1 OF 3 Dwg HEAF PART SERIES: HEAF FEATURES EN 13-3117 Revision- APPLICATIONS Low Profile Surface Mount Package High Power Low Insertion Loss High Isolation High Reliability Power Amplifiers Modulator Demodulator
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423F100
2Y194
HEAF
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Untitled
Abstract: No abstract text available
Text: ;9-29 - TSPM ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV [ [ [ [ [ [ [ [ [ [ [ zAD= ,Geq yhjklhn F 7 8 zAD= ,Geq kgghgkog zAD= ,Geq w/wgpggigjlgnh 6@?D46D 74D4 6@<= wGFL9;L 9JJ9F?=E=FL huc hvc hw wGFL9;L E9L=JA9D wGFL9;L J=KAKL9F;= hgu ilg4uwfjg4xw kkg4uw f hil4xw
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MTVA0300N07
Abstract: MTVA0300
Text: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-Flex Lab-Flex® S Lab-Flex® AF Semi-Rigid, Conformable & Flexible Semi-Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV
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rfft
Abstract: iir_fr16 fract16 A-18 A-20 ADSP-BF561 Fract32
Text: W4.0 C/C+ Compiler and Library Manual for Blackfin Processors Revision 3.0, January 2005 Part Number 82-000410-03 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2005 Analog Devices, Inc., ALL RIGHTS RESERVED. This document
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trm a55
Abstract: No abstract text available
Text: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-Flex Lab-Flex® S Lab-Flex® AF Semi-Rigid, Conformable & Flexible Semi-Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV
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ZGJE
Abstract: GAD 929 eajj
Text: ;9-29 - TSPM ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV [ [ [ [ [ [ [ [ [ [ [ zAD= ,Geq yhjklhn F 7 8 zAD= ,Geq kgghgkog zAD= ,Geq w/wgpggigjlgnh 6@?D46D 74D4 6@<= wGFL9;L 9JJ9F?=E=FL huc hvc hw wGFL9;L E9L=JA9D wGFL9;L J=KAKL9F;= hgu ilg4uwfjg4xw kkg4uw f hil4xw
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Untitled
Abstract: No abstract text available
Text: ;9-29 - TSPM ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV [ [ [ [ [ [ [ [ [ [ [ [ zAD= ,Geq yhjklhn F 7 8 zAD= ,Geq kgghgkog zAD= ,Geq w/wgpggigjlgnh 6@?D46D 74D4 6@<= wGFL9;L 9JJ9F?=E=FL huc hvc hw wGFL9;L E9L=JA9D wGFL9;L J=KAKL9F;= hgu ilg4uwfjg4xw kkg4uw f hil4xw
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE FCA50BC50 UL;E76102 M F C A 5 0 B C 5 0 is a dual power M OSFET module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is elecjtjcally isolated from semiconductor elements for simple heafeCk\onstruction.
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FCA50BC50
E76102
100ns
A50BC
25Irr
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2N2988
Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
Text: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA
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2N2987
2N2994
2N2991
2N2988
2N2967
2N2989
2N2993
2N2991
EL 2n25
2N25
2N2990
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2N3418
Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
Text: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:
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2N3418,
2N3419,
2N3420,
2N3421
TIX3033,
TIX3034,
TIX3035,
TIX3036
2N3418
2N3419
tata ak 90
2N3420
TIX3033
TNR*G
TIX3034
TIX3035
TIX3036
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A423
Abstract: TP801C06 a423 power
Text: T P 8 0 1 C 0 6 I5A h f r — > < U T ¥ 4 =fr— K SCHOTTKY BARRIER DIODE : Features • ffeVF Low V f • X -f - ^ mmmmm C on nection D iagram > ^ 7, t r - Super high speed sw itc h in g . • 7 V - * - ttiS C J : H igh reliability by planer design. r*-T
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TP801C06
500ns,
A423
a423 power
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1320C
Abstract: HMR3300 1S200 R3330 1301a 9C326 HMR3200 3aud
Text: H M R 3 2 0 0 /H M R 3 3 0 0 ^ r7i^ r~7 ~- SENSOR PRODUCTS DIGITAL COMPASS SOLUTIONS F e a tu re s * * * * » * * * 1 HaSdjng' Accuracy, Oil * Res oluti 0.5* Repeatability ±60" Tilt Range <Pitch and Roll> for HMR3300 S m all Si ze 1.0" x 1.45" x 0.4' , LIgfit Weight
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HMR3200/HMR3300
hU33300
HMR3300
HMR32C3
HMR33C3
HMR330C
HMR320Q
HMR3200-DefTWK232
1320C
1S200
R3330
1301a
9C326
HMR3200
3aud
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um-sr
Abstract: No abstract text available
Text: RFco•AXIAL CONNECTORS U M s e r ie s Overview • The U M U ltra-M in iatu re series consists o f ultrasmall-size coaxial connectors th at are most suitable fo r very th in coaxial cables having a high reliability. T w o types o f lock are available: the screw-lock typ e and the quick-lock typ e. The
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7586 nuvistor
Abstract: tube 7586 nuvistor 7586 thyratron rs tube
Text: 7586 M edium -M u Triode NUVISTOR TYPE For In d u s t r ia l A p p lic a tio n s GENERAL DATA E le c t r i c a l : Heater, fo r U n ip o te n tia l Cathode: V o ltag e AC o r D C . 6.3 ± 10% C urrent at 6.3 v o lt s . . .
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92CM-I0460RI
92CM-I0964
92CS-KD40RI
7586 nuvistor
tube 7586
nuvistor
7586
thyratron
rs tube
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RJH 32
Abstract: No abstract text available
Text: 512 x 18/1024 x 18 Synchronous FIFO FEATURES • May be Cascaded for Increased Depth, or Paralleled for Increased Width • Fast Cycle Times: 20/25/35 ns • 16-mA-l<x Three-State Outputs • Pin-Compatible Drop-In Replacements for IDT72215B/25B FIFOs • Choice of IDT-Compatible or Enhanced Operating
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IDT72215B/25B
LH540215/25
68PLCC
PLCC68-P-950)
68-pin,
950-mil
LH540215/25
68-pin
PLCC68-P-S950)
RJH 32
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Untitled
Abstract: No abstract text available
Text: A K y C T H H E C K H Í t 5KyPHAJI T o m XXXV . <'U/‘% U U A # C iA I M a # y j\K 551.463.21 e/¿ > 1989 B b in . h M C { 4 J C ¡k l'W M .U i'& p jfc ? O MOflEJIHPOBAHHH B 3AHM0 AEÍ1CTBHH MOft ^ M ñ ^ / S o i ^ B ¿JByMEPHO-HEOJJHOPOJJHOM B 0 JIH0 B 0 3 E '
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iicii0Jib30BaHHeM
B3aiiM036HCTBiin
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2953A
Abstract: 2952A sem 5025 2953I npjt npjt AC DRIVE 2952IM 2953aim
Text: S e m i c o n d u c t o r t ß L P 2952/L P 2 9 5 2 A /L P 2953/L P 2953 A A d ju stab le M ic ro p o w e r L o w -D ro p o u t Voltage R eg u la to rs General Description The LP2952 and LP2953 are micropower voltage regulators with very low quiescent current 130 pA typical at 1 mA load
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LP2952/LP2952A/LP2953/LP2953A
2952/L
2953/L
LP2952
LP2953
o11he
LP2951,
2953A
2952A
sem 5025
2953I
npjt
npjt AC DRIVE
2952IM
2953aim
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lf157
Abstract: No abstract text available
Text: S G S -T H O M S O N l f i I I I L f I I I - { ¡I I I 1 ^ 0 ô [i[L [l( ê ïï^ ( ô ) M []( g S l f I 57 - LF 2 5 7 - L F 3 5 7 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS • HIGH INPUT IMPEDANCE J-FET INPUT STAGE ■ HIGH SPEED J-FET OP-AMPs : UP to 20MHz,
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20MHz,
lf157
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lm2903
Abstract: LM393AH LM393A LM293A LM393 APPLICATIONS zero crossing LM2903T
Text: E ri LM193/A - LM293/A LM393/A - LM2903 SGS-THOMSON ¡y LOW POWER DUAL VOLTAGE COMPARATORS • WIDE SINGLE SUPPLY VOLTAGE RANGE OR DUAL SUPPLIES +2V TO +36V OR ±1V TO ±18V ■ VERY LOW SUPPLY CURRENT 0.4mA INDEPENDENT OF SUPPLY VOLTAGE (1 mW/comparator at +5V)
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LM193/A
LM293/A
LM393/A
LM2903
250mV
volLM193
LM293
LM393
LM193
lm2903
LM393AH
LM393A
LM293A
LM393 APPLICATIONS zero crossing
LM2903T
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laser diode 1550 ns single mode
Abstract: GENERAL SEMICONDUCTOR SM 3b diode 1550 laser diode dfb laser diode 1550 Semiconductor Laser International 1550 communication laser diode dfb 1550 nm laser diode DFB Laser-Diode 1550 nm laser diode philips 075mW
Text: Philips Components c q f s i /d A -D E V E L O P M E N T DATA This data sheet contains advance information and specifications which are subject to change without notice. BURIED HETEROJUNCTION InGaAsP DFB LASER DIODE
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CQF61/D
QF61/D
BS4803:
BS4803.
I660nm
laser diode 1550 ns single mode
GENERAL SEMICONDUCTOR SM 3b diode
1550 laser diode
dfb laser diode 1550
Semiconductor Laser International
1550 communication laser diode
dfb 1550 nm laser diode
DFB Laser-Diode 1550 nm
laser diode philips
075mW
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Untitled
Abstract: No abstract text available
Text: Bulletin 12079/A International S R e c tifie r s d io 53c .l s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • High power FAST recovery diode series ■ 2.0 to 3.0 ps recovery time ■ High voltage ratings up to 3000V ■ High current capability
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12079/A
SD1053C.
SD1053C
4fl5545E
D-706
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lt 5237
Abstract: 2N5390
Text: TYPE 2N5390 N-P-N DARLINGTON-CONNECTED PLANAR SILICON POWER TRANSISTOR • Very High Gain — 1000 Min at 5 A • High-Speed Switching — 0.3 ¡j . s Typ ton | 3 h> Z “ 55 p ° ‘ d e v ic e sc h e m a tic o * m e c h a n ic a l d a t a 5 'a b s o l u t e m a x im u m r a t in g s a t 2 5 ° C c a se t e m p e r a t u r e u n le ss o th e r w is e n o te d
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2N5390
lt 5237
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2N1907
Abstract: 2n1908 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors
Text: TYPES 2NI907, 2N1908 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS Zz for z : p s MILITARY AND INDUSTRIAL APPLICATIONS mechanical data These transistors are in precision w elded, herm etically sealed enclosures. The mounting base provides an
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2NI907,
2N1908
DC-11
2N1907
A97T
Texas Germanium
PW 2N
GERMANIUM PNP LOW POWER TRANSISTORS
2NI907
Germanium power
Germanium PNP - Low Power Transistors
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s41 hal sensor
Abstract: No abstract text available
Text: PENTIUM PRO PROCESSOR AT 150 MHz, 166 MHz, 180 MHz and 200 MHz • Available at 150 MHz, 166 MHz, 180 MHz and 200MHz core speeds ■ Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications
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200MHz
32-bit
Mfi2bl75
0171D3R
s41 hal sensor
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