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    HLX6228 Search Results

    HLX6228 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HLX6228 Honeywell 128K x 8 STATIC RAM?Low Power SOI Original PDF
    HLX6228ABF Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABF Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABH Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABH Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABN Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABN Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABR Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ABR Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AEF Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AEF Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AEH Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AEH Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AEN Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AEN Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AER Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228AER Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ASF Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ASF Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF
    HLX6228ASH Honeywell 128K x 8 STATIC RAM-Low Power SOI Original PDF

    HLX6228 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HLX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation


    Original     		PDF HLX6228 360mW 40MHz ADS-14207

    HLX*8

    Abstract: HLX6228
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead HLX*8 HLX6228

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead

    E310A

    Abstract: HLX6228
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead E310A HLX6228

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 HLX6228 128K x 8 STATIC RAM—Low Power SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is


    Original     		PDF HLX6228 ADS-14207

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 30 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 Military & Space Products 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 Packa2051.

    W28C256

    Abstract: w28c64 w28c solar inverter circuit ups error fpga radiation galactic SOLAR TRANSISTOR CB228 XQR4000XL
    Text: High Reliability Products Radiation Hardened FPGAs The XQR4000XL Family u 3 Device Sizes -XQR4013XL 10K to 30K system gates -XQR4036XL (20K to 65K system gates) -XQR4062XL (40K to 130K system gates) u Packages -Ceramic QFP - CB228 -PQFP, BGA under consideration


    Original     		PDF XQR4000XL -XQR4013XL -XQR4036XL -XQR4062XL CB228 -55oC 125oC 43E-8 W28C256 w28c64 w28c solar inverter circuit ups error fpga radiation galactic SOLAR TRANSISTOR CB228

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HLX6228 32-Lead

    lt 6228

    Abstract: TRANSISTOR A7h
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |a,m Low Power Process (Leff= 0.5 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106ra 1x101 1x109 HLX6228 32-Lead lt 6228 TRANSISTOR A7h

    Transistors smd A7H

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10erad 1x101 HLX6228 32-Lead Transistors smd A7H

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6228 1x106 1x101 1x109 0014flb 6C634

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6228 1x101 1x109 32-Lead