Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HM628127H Search Results

    SF Impression Pixel

    HM628127H Price and Stock

    Hitachi Ltd HM628127HBJP-15

    IC,SRAM,128KX8,CMOS,SOJ,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HM628127HBJP-15 16,213
    • 1 $7.5
    • 10 $7.5
    • 100 $7.5
    • 1000 $2.75
    • 10000 $2.625
    Buy Now
    HM628127HBJP-15 125
    • 1 $17.811
    • 10 $17.811
    • 100 $13.853
    • 1000 $13.853
    • 10000 $13.853
    Buy Now

    Hitachi Ltd HM628127HBLJP-15

    CACHE SRAM, 128KX8, 15NS, CMOS, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HM628127HBLJP-15 536
    • 1 $17.811
    • 10 $17.811
    • 100 $17.811
    • 1000 $11.874
    • 10000 $11.874
    Buy Now
    HM628127HBLJP-15 10
    • 1 $10.5
    • 10 $7.875
    • 100 $7.875
    • 1000 $7.875
    • 10000 $7.875
    Buy Now

    Hitachi Ltd HM628127HJP-20

    STANDARD SRAM, 128KX8, 20NS, CMOS, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HM628127HJP-20 18
    • 1 $13.5
    • 10 $10.125
    • 100 $10.125
    • 1000 $10.125
    • 10000 $10.125
    Buy Now

    Others HM628127HJP20

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange HM628127HJP20 618
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    HM628127H Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HM628127H Renesas Technology 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HB Renesas Technology 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HBJP-15 Hitachi Semiconductor 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HBJP-15 Hitachi ULSI Systems 1 M High Speed SRAM (128-kword x 8-bit) Original PDF
    HM628127HBJP-15 Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM Original PDF
    HM628127HBJP-15R Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM Original PDF
    HM628127HBJP15TR Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM, Tape and reel Original PDF
    HM628127HBJP-20 Hitachi Semiconductor 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HBJP-20 Hitachi ULSI Systems 1 M High Speed SRAM (128-kword x 8-bit) Original PDF
    HM628127HBJP-20 Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM Original PDF
    HM628127HBJP-25 Hitachi Semiconductor SRAM GP Single Port Original PDF
    HM628127HBLJP-15 Hitachi Semiconductor 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HBLJP-15 Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM Original PDF
    HM628127HBLJP-20 Hitachi Semiconductor 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HBLJP-25 Hitachi Semiconductor SRAM GP Single Port Original PDF
    HM628127HBLJPI-20 Hitachi ULSI Systems 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HB Series Hitachi Semiconductor 131072-word x 8-bit High Speed CMOS Static RAM Original PDF
    HM628127HJP-20 Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM Original PDF
    HM628127HLJP-20 Renesas Technology SRAM Chip, 131072-Word x 8/9-bit High Speed CMOS Static RAM Original PDF

    HM628127H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HM628127HBLJP-15

    Abstract: HM628127HB HM628127HBJP-15 HM628127HBJP-20 HM628127HBLJP-20
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word × 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm shrink CMOS process and high speed circuit


    Original
    HM628127HB 131072-word ADE-203-350B 128-k 400-mil 32-pin HM628127HB-25 HM628127HBLJP-15 HM628127HBJP-15 HM628127HBJP-20 HM628127HBLJP-20 PDF

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HM628127HB Series 1 M High Speed SRAM 128-kword x 8-bit ADE-203-350D (Z) Rev. 4.0 Nov. 1997 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word × 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm shrink CMOS process and high speed circuit


    Original
    HM628127HB 128-kword ADE-203-350D 128-k 400-mil 32-pin HM628127HB-25 Hitachi DSA00164 PDF

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HM628127HBI Series 131072-word x 8-bit High Speed CMOS Static RAM ADE-203-785A Z Rev. 1.0 May. 19, 1997 Description The HM628127HBI is an asynchronous high speed static RAM organized as 128-k word × 8-bit. It realize high speed access time (20 ns) with employing 0.8 µm shrink CMOS process and high speed circuit


    Original
    HM628127HBI 131072-word ADE-203-785A 128-k 400-mil 32-pin Hitachi DSA00164 PDF

    HM628127HJP-20

    Abstract: HM628127HLJP-20 HM629127HJP-20 HM629127HJP-25 HM629127HLJP-20 HM629127HLJP-25
    Text: HM628127H/HM629127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM The HM628127H/HM629127H is an asynchronous high speed static RAM organized as 131,072-word × 8/9-bit. It realizes high speed access time 20/25 ns with employing 0.8 µm CMOS process and high speed circuit designing


    Original
    HM628127H/HM629127H 131072-word HM628127H/HM629127H 072-word 400-mil 32/36-pin HM628127HJP-20 HM628127HJP-25 HM628127HJP-20 HM628127HLJP-20 HM629127HJP-20 HM629127HJP-25 HM629127HLJP-20 HM629127HLJP-25 PDF

    HM628127HBJP-25

    Abstract: transistor A16 HM628127HB HM628127HBJP-15 HM628127HBJP-20 HM628127HBLJP-15 HM628127HBLJP-20 Hitachi DSA00513
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM Under development Rev. 3 Feb. 18, 1993 The HM628127HB is an asyncronous high speed static RAM organized as 131072-word × 8-bit. It realize high speed access time 15/20/25 ns with employing 0.8 µm CMOS process and high speed


    Original
    HM628127HB 131072-word HM628127HBJP-15 HM628127HBJP-20 HM628127HBJP-25 400-mil 32-pin CP-32DB) HM628127HBJP-25 transistor A16 HM628127HBJP-15 HM628127HBJP-20 HM628127HBLJP-15 HM628127HBLJP-20 Hitachi DSA00513 PDF

    HM628127HB

    Abstract: HM628127HBJP-15 HM628127HBJP-20 HM628127HBLJP-15 HM628127HBLJP-20 Hitachi DSA00181
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word × 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm shrink CMOS process and high speed circuit designing


    Original
    HM628127HB 131072-word ADE-203-350C 128-k 400-mil 32-pin HM628127HB-25 HM628127HBJP-15 HM628127HBJP-20 HM628127HBLJP-15 HM628127HBLJP-20 Hitachi DSA00181 PDF

    Rakon TXO200B

    Abstract: RA2 GPS ANTENNA DFC21R57P002HHA RAKON TXO200B 25 MHZ 74 series TTL NOT gate ndk 50MHz NDK America Passive GPS ceramic patch antenna rakon Rakon TXO
    Text: GP2000 GPS Receiver Hardware Design Application Note AN4855 ISSUE 2.0 October 1999 This Applications note should be used in conjunction with the following literature available from www.zarlink.com Part No GP2010 GP2015 GP2021 P60ARM-B GPS Orion Description


    Original
    GP2000 AN4855 GP2010 GP2015 GP2021 P60ARM-B ARM60-B DS4056 DS4374 DS4077 Rakon TXO200B RA2 GPS ANTENNA DFC21R57P002HHA RAKON TXO200B 25 MHZ 74 series TTL NOT gate ndk 50MHz NDK America Passive GPS ceramic patch antenna rakon Rakon TXO PDF

    HM6287HL-35

    Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
    Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM


    Original
    PDF

    4096 RAM

    Abstract: 8 bit memory ic 16 BIT WORD STATIC RAM "Video RAM" 524,288 9bit HM658512 DYNAMIC RAM 16384-WORD HM628512 RAM HM63021
    Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.


    Original
    PDF

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original
    HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


    OCR Scan
    HM628127HB 131072-word ADE-203-350C 128-k HM628127HB 400-mil 32-pin HM628127HB-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


    OCR Scan
    HM628127HB 131072-word ADE-203-350B 128-k 400-mil 32-pin HM628127HB-25 PDF

    HM628127HBJP-15

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 pm shrink CMOS process and high speed circuit designing


    OCR Scan
    HM628127HB 131072-word ADE-203-350C 128-k 400-mil 32-pin HM628X27HB HM628127HBJP-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127H/HM629127H Series - P relim in ary 131072-word x 8/9-bit High Speed CMOS Static RAM T he H M 628127H /H M 629127H is an asyncronous high speed static R A M organized as 128 kw ord x 8 /9 b it. It re a liz e h ig h s p e e d a c c e s s tim e 15 /1 7/2 0/25 ns w ith em p loy in g 0.8 |xm C M O S


    OCR Scan
    HM628127H/HM629127H 131072-word 628127H 629127H PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 1 M High Speed SRAM 128-kword x 8-bit HITACHI ADE-203-350D (Z) Rev. 4.0 Nov. 1997 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


    OCR Scan
    HM628127HB 128-kword ADE-203-350D 128-k 400-mil 32-pin HM628127HB-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HBI Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-785A Z Rev. 1.0 May. 19, 1997 Description The HM628127HBI is an asynchronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access tim e (20 ns) with em ploying 0.8 Jim shrink CMOS process and high speed circuit


    OCR Scan
    HM628127HBI 131072-word ADE-203-785A 128-k 400-mil 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asynchronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 Jim shrink CMOS process and high speed circuit


    OCR Scan
    HM628127HB 131072-word ADE-203-350C 128-k 400-mil 32-pin HM628127HB-25 PDF

    HM628127HBJP-25

    Abstract: No abstract text available
    Text: ADE-203-350 Z HM628127HB Series 131,072-word x 8-bit High Speed CMOS Static RAM Preliminary HITACHI T he H M 628127H B is an asyncronous high speed static R A M o rg an ized as 128-kw ord x 8-bit. It realize high speed access tim e (15/20/25 ns) with em ploying 0.8 |im shrink CM O S process and high


    OCR Scan
    ADE-203-350 HM628127HB 072-word 628127H 128-kw 400-m 32-pin HM628127HBJP-25 PDF

    ZUA12

    Abstract: AE33A
    Text: blE D • 44U2D3 G 0 2 1 D 4 5 443 ■ H I T 2 HM628127H/HM629127H Series— —Preliminary 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI/ LOGI C/ ARRAYS/ MEM The HM628127H/HM629127H is an asyncronous high speed static RAM organized as 128 kword x


    OCR Scan
    44U2D3 HM628127H/HM629127H 131072-word HM628127HJP-15 HM628127HJP-17 HM628127HJP-20 HM628127HJP-25 HM628127HUP-15 HM628127HUP-17 HM628127HLJP-20 ZUA12 AE33A PDF

    HM628127HJP20

    Abstract: No abstract text available
    Text: HM628127H / HM629127H Series 131,072-word x 8/9-bit High Speed CMOS Static RAM HITACHI The H M 6 2 8 1 2 7 H /H M 6 2 9 1 2 7 H is an asynchronous high speed static RA M organized as 131,072-w ord x 8/9-bit. It realizes high speed acce ss tim e 2 0/25 ns w ith em p lo y in g 0.8 jim


    OCR Scan
    HM628127H HM629127H 072-word 072-w 400-m /36-pin HM628127HJP-20 HM628127. HM628127H/HM629127H HM628127HJP20 PDF

    65536-word

    Abstract: 8192-WORD SRAM
    Text: Contents • L in e U p o f H ita c h i IC M e m o r i e s . 7 • P a c k a g e In f o rm a tio n s .


    OCR Scan
    HM6287/ 65536-word HM6287H HM65V8512 524288-word HM65W8512 HM658512A HM658128A 8192-WORD SRAM PDF

    HM51W16405

    Abstract: No abstract text available
    Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in


    OCR Scan
    DP-22N DP-22NB HM6287 HM6288 DP-24NC DP-28 HM6208H HM6207H HM62256B HM51W16405 PDF

    SC 2272

    Abstract: No abstract text available
    Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in


    OCR Scan
    DP-22N DP-22NB HM6287 HM6288 DP-24NC HM6208H HM6207H DP-28 HM62256B SC 2272 PDF

    Untitled

    Abstract: No abstract text available
    Text: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series


    OCR Scan
    512kx8512kx8r HM62W8512A HM628512A HM628512 HM6741Q0H HM671400H HM62V8128B HM62V8128 HM62W1664HB HM62W1664H PDF