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Untitled Abstract: No abstract text available Text: HARRIS nu S E M I C O N D U C T O R MbE D • 4 3 0 2 2 ^ ^ O D Q O l b ^ T ■ HMS " F g j H A R R IS PRODUCT DATA 5 \ '^ HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features • High Transconductance, especially for Feedback Amplifier Designs	OCR Scan	PDF	HMF-06300
Untitled Abstract: No abstract text available Text: HARRI S Hü S E M I C O N D U C T O R HbE D • 4 3 G 2 2 b tì G 0 0 0 Z 1 7 b ■ T -3 1 -3 -S H M F-06310 g0 H A R R IS Gain Optimized Low Current GaAs FET 2-12 G H z PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids	OCR Scan	PDF	43G22bt G000Z17 F-06310 HMF-06310 HMF06300.
HMF06300 Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates	OCR Scan	PDF	Qailfl37 HMF-06300 HMF06300
F0631 Abstract: samsung 1019 Text: SAMSUNG ELECTRONICS INC HARRIS bOE Ï 7 ^ 4 1 4 2 0011074 ITS H M F -06310 Gain Optimized Low Current G aAs FET 2-12 GHz PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	PDF	HMF-06310 HMF06300. F0631 samsung 1019