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    HN1B04FE Price and Stock

    Toshiba America Electronic Components HN1B04FE-Y,LXHF

    AUTO AEC-Q PNP + NPN TR VCEO:-50
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    DigiKey HN1B04FE-Y,LXHF Reel 4,000 4,000
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    HN1B04FE-Y,LXHF Cut Tape 3,989 1
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    HN1B04FE-Y,LXHF Digi-Reel 1
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    Avnet Americas HN1B04FE-Y,LXHF Reel 36 Weeks 4,000
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    Mouser Electronics HN1B04FE-Y,LXHF 7,934
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    TTI HN1B04FE-Y,LXHF Reel 4,000
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    Toshiba America Electronic Components HN1B04FE-GR,LF

    TRANS NPN/PNP 50V 0.15A ES6
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    DigiKey HN1B04FE-GR,LF Cut Tape 3,760 1
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    HN1B04FE-GR,LF Digi-Reel 3,760 1
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    HN1B04FE-GR,LF Reel 4,000
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    Mouser Electronics HN1B04FE-GR,LF 211,127
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    Toshiba America Electronic Components HN1B04FE-GR,LXHF

    AUTO AEC-Q PNP + NPN TR VCEO:-50
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    DigiKey HN1B04FE-GR,LXHF Cut Tape 2,353 1
    • 1 $0.71
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    HN1B04FE-GR,LXHF Digi-Reel 1
    • 1 $0.71
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    HN1B04FE-GR,LXHF Reel 4,000
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    Avnet Americas HN1B04FE-GR,LXHF Reel 36 Weeks 4,000
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    Mouser Electronics HN1B04FE-GR,LXHF 7,772
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    • 1000 $0.181
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    TTI HN1B04FE-GR,LXHF Reel 4,000
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    Toshiba America Electronic Components HN1B04FE-Y,LF

    TRANS NPN/PNP 50V 0.15A ES6
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    DigiKey HN1B04FE-Y,LF Cut Tape 5 1
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    • 10 $0.144
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    HN1B04FE-Y,LF Digi-Reel 5 1
    • 1 $0.24
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    HN1B04FE-Y,LF Reel 4,000
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    Mouser Electronics HN1B04FE-Y,LF
    • 1 $0.17
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    Toshiba America Electronic Components HN1B04FE-YLF

    Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SC-107C Emboss T/R - Tape and Reel (Alt: HN1B04FE-Y,LF)
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    Avnet Americas HN1B04FE-YLF Reel 12 Weeks 4,000
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    HN1B04FE Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1B04FE Toshiba Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Original PDF
    HN1B04FEGR Toshiba TRANS GP BJT NPN PNP 50V 50A 6(2-2N1G) Original PDF
    HN1B04FE-GR,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS NPN/PNP 50V 0.15A ES6 Original PDF
    HN1B04FE-GR(5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A ES6 Original PDF
    HN1B04FE-GR,LXHF Toshiba America Electronic Components AUTO AEC-Q PNP + NPN TR VCEO:-50 Original PDF
    HN1B04FE-Y,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS NPN/PNP 50V 0.15A ES6 Original PDF
    HN1B04FE-Y,LXHF Toshiba America Electronic Components AUTO AEC-Q PNP + NPN TR VCEO:-50 Original PDF
    HN1B04FE-Y(T5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A ES6 Original PDF

    HN1B04FE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN1B04FE

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft Excellent hFE linearity
    Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400


    Original     		PDF HN1B04FE 150mA -150mA HN1B04FE TOSHIBA Transistor Silicon PNP Epitaxial Type Ft Excellent hFE linearity

    E22B2

    Abstract: HN1B04FE
    Text: HN1B04FE 東芝トランジスタ シリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FE ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。


    Original     		PDF HN1B04FE 150mA -150mA E22B2 HN1B04FE

    HN1B04FE

    Abstract: No abstract text available
    Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1B04FE 150mA -150mA HN1B04FE

    Untitled

    Abstract: No abstract text available
    Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400


    Original     		PDF HN1B04FE 150mA

    HN1B04FE

    Abstract: No abstract text available
    Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1B04FE 150mA -150mA HN1B04FE

    Untitled

    Abstract: No abstract text available
    Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400


    Original     		PDF HN1B04FE 150mA

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


    Original     		PDF 3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram