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    Toshiba America Electronic Components HN1B04FU-Y,LF

    X34 PB-F US6 PLN (LF) TRANSISTOR
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    Toshiba America Electronic Components HN1B04FU-Y,LXHF

    AUTO AEC-Q PNP + NPN TR VCEO:-50
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    Toshiba America Electronic Components HN1B04FU-GR,LXHF

    AUTO AEC-Q PNP + NPN TR VCEO:-50
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    Toshiba America Electronic Components HN1B04FU-GR,LF

    TRANS NPN/PNP 50V 0.15A US6
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    Toshiba America Electronic Components HN1B04FU-Y(T5L,F,T

    TRANS NPN/PNP 50V 0.15A US6
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    HN1B04FU Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1B04FU Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Original PDF
    HN1B04FU Toshiba NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
    HN1B04FU-GR Toshiba HN1B04F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal Original PDF
    HN1B04FU-GR,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS NPN/PNP 50V 0.15A US6 Original PDF
    HN1B04FU-GR(L,F,T) Toshiba HN1B04FU - Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Original PDF
    HN1B04FU-GR,LXHF Toshiba America Electronic Components AUTO AEC-Q PNP + NPN TR VCEO:-50 Original PDF
    HN1B04FU-Y Toshiba HN1B04F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal Original PDF
    HN1B04FU-Y,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - X34 PB-F US6 PLN (LF) TRANSISTOR Original PDF
    HN1B04FU-Y,LXHF Toshiba America Electronic Components AUTO AEC-Q PNP + NPN TR VCEO:-50 Original PDF
    HN1B04FU-Y(T5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A US6 Original PDF

    HN1B04FU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400


    Original
    HN1B04FU 150mA PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: HN1B04FU 東芝トランジスタ シリコンNPN・PNPエピタキシャル形 PCT方式 HN1B04FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。


    Original
    HN1B04FU 150mA -150mA 100mA, HN1B04FU PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400


    Original
    HN1B04FU 150mA -150mA HN1B04FU PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original
    HN1B04FU 150mA -150mA HN1B04FU PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original
    HN1B04FU 150mA -150mA HN1B04FU PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: HN1B04FU 東芝トランジスタ シリコンNPN・PNPエピタキシャル形 PCT方式 HN1B04FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。


    Original
    HN1B04FU 150mA -150mA 100mA, HN1B04FU PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400


    Original
    HN1B04FU 150mA -150mA HN1B04FU PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original
    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original
    2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original
    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original
    TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original
    PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original
    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original
    SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TOSHIBA TRANSISTOR HN1B04FU SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N 1 B 4 F U Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 . 1± 0.1 1.25 ± 0 . 1 n6 r - i4 |L—_Lr 2 43 S9'0


    OCR Scan
    HN1B04FU 150mA -150m PDF

    HN1B04FU

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR HN1B04FU SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HN1 B04FU U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 .1± 0.1 1.25 ± 0 .1. Q l: Œ- High Voltage and High C urrent


    OCR Scan
    HN1B04FU N1B04FU 150mA HN1B04FU PDF

    MARKING e1v

    Abstract: No abstract text available
    Text: TOSHIBA HN1B04FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl ZI F II Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2. 1± 0.1 1.2 5 ± 0.1 Ql: High Voltage and High C urrent


    OCR Scan
    HN1B04FU 150mA MARKING e1v PDF