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Toshiba America Electronic Components HN1D01FU,LF(T DIODE ARRAY GP 80V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1D01FU,LF(T	Digi-Reel	3,107		1	1 $0.32 10 $0.196 100 $0.32 1000 $0.08035 10000 $0.08035	Buy Now
	HN1D01FU,LF(T	Cut Tape	3,107		1	1 $0.32 10 $0.196 100 $0.32 1000 $0.08035 10000 $0.08035	Buy Now
	HN1D01FU,LF(T	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.06591	Buy Now
Avnet Americas	HN1D01FU,LF(T	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.04917	Buy Now
Mouser Electronics	HN1D01FU,LF(T					1 $0.3 10 $0.183 100 $0.079 1000 $0.071 10000 $0.05	Get Quote
Toshiba America Electronic Components HN1D01F(TE85L,F) DIODE ARRAY GP 80V 100MA SM6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1D01F(TE85L,F)	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.08733	Buy Now
	HN1D01F(TE85L,F)	Digi-Reel			1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
	HN1D01F(TE85L,F)	Cut Tape			1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
Mouser Electronics	HN1D01F(TE85L,F)		8,868			1 $0.35 10 $0.304 100 $0.197 1000 $0.129 10000 $0.058	Buy Now
Toshiba America Electronic Components HN1D01FE(TE85L,F) DIODE ARRAY GP 80V 100MA ES6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1D01FE(TE85L,F)	Cut Tape	153		1	1 $0.38 10 $0.236 100 $0.38 1000 $0.38 10000 $0.38	Buy Now
	HN1D01FE(TE85L,F)	Digi-Reel			1	1 $0.38 10 $0.236 100 $0.38 1000 $0.38 10000 $0.38	Buy Now
	HN1D01FE(TE85L,F)	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.06935	Buy Now
Mouser Electronics	HN1D01FE(TE85L,F)					1 $0.32 10 $0.208 100 $0.136 1000 $0.134 10000 $0.056	Get Quote
EBV Elektronik	HN1D01FE(TE85L,F)			13 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1D01FU(T5L,F,T) Small Signal Switching Diodes 85V Vrm 80VR 300mA 2A IFSM 0.92V VF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1D01FU(T5L,F,T)					1 - 10 - 100 - 1000 - 10000 $0.077	Get Quote
Toshiba America Electronic Components HN1D01FU,LF(B HN1D01FU,LF(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN1D01FU,LF(B		1,300		329	1 - 10 - 100 - 1000 $0.2222 10000 $0.2222	Buy Now
Quest Components	HN1D01FU,LF(B		1,040			1 $0.86 10 $0.86 100 $0.387 1000 $0.258 10000 $0.258	Buy Now

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HN1D01F Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1D01F	Toshiba	Common Anode Diode Array	Original	PDF
HN1D01F	Toshiba	DIODE	Scan	PDF
HN1D01FE	Toshiba		Original	PDF
HN1D01FE(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 6 ES6	Original	PDF
HN1D01F(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 6 SM6	Original	PDF
HN1D01FU	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN1D01FU	Toshiba	Japanese - Diodes	Original	PDF
HN1D01FU	Toshiba	Diodes	Original	PDF
HN1D01FU	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
HN1D01FU	Toshiba	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF
HN1D01FU,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6	Original	PDF
HN1D01FU,LF(T	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6	Original	PDF
HN1D01FU(T5L,F,T)	Toshiba	HN1D01FU - Diode Switching 85V 0.3A 6-Pin US T/R	Original	PDF

HN1D01F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)	Original	PDF	HN1D01FU
HN1D01F Abstract: No abstract text available Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm z Small package z Low forward voltage : VF 3 = 0.92 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 2.2 pF (typ.)	Original	PDF	HN1D01F HN1D01F
Untitled Abstract: No abstract text available Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN1D01FE HN1D02FU
HN1D01FU Abstract: No abstract text available Text: HN1D01FU 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN1D01FU ○ 超高速スイッチング用単位: mm z ウルトラスーパーミニ 6 端子パッケージにアノードコモンを 2 ユニットを内蔵しています。	Original	PDF	HN1D01FU 100mA HN1D01FU
HN1D01F Abstract: 030619EAA Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm Small package Low forward voltage : VF 3 = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.)	Original	PDF	HN1D01F HN1D01F 030619EAA
HN1D01F Abstract: No abstract text available Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm z Small package z Low forward voltage : VF 3 = 0.92 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 2.2 pF (typ.)	Original	PDF	HN1D01F HN1D01F
HN1D01FE Abstract: No abstract text available Text: HN1D01FE 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN1D01FE ○ 超高速スイッチング用単位: mm z エクストリームスーパーミニ 6 端子パッケージにアノードコモンを 2 ユニットを内蔵しています。	Original	PDF	HN1D01FE 100mA HN1D01FE
HN1D01FU Abstract: No abstract text available Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)	Original	PDF	HN1D01FU HN1D01FU
HN1D01F Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)	Original	PDF	HN1D01F HN1D01F TOSHIBA "ULTRA HIGH SPEED" DIODE
Untitled Abstract: No abstract text available Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	PDF	HN1D01FE HN1D02FU
HN1D01FE Abstract: HN1D02FU Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN1D01FE HN1D02FU HN1D01FE
Untitled Abstract: No abstract text available Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)	Original	PDF	HN1D01FU
HN1D01FU Abstract: No abstract text available Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)	Original	PDF	HN1D01FU HN1D01FU
HN1D01F Abstract: No abstract text available Text: HN1D01F 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN1D01F ○ 超高速スイッチング用 z z z z 単位: mm アノードコモンを 2 ユニットを内蔵順方向特性が良い。 : VF 3 = 0.92V (標準)	Original	PDF	HN1D01F 100mA HN1D01F

4558 dd Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300	OCR Scan	PDF	1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Untitled Abstract: No abstract text available Text: S IL IC O N E P IT A X IA L P L A N A R T Y P E HN1D01FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. Unit in mm • Small Package • Low Forward Voltage • F ast Reverse Recovery Time : • Small Total Capacitance : Vp 3 = 0.92 V (Typ.) 1^ = 1.6ns (Typ.)	OCR Scan	PDF	HN1D01FU
diode n1d Abstract: HN1D01FU Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance	OCR Scan	PDF	HN1D01FU 961001EAA2' diode n1d HN1D01FU
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D01FU TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance	OCR Scan	PDF	HN1D01FU
HN1D01F Abstract: cd3m Text: TOSHIBA HN1D01F T O S H IB A D IO D E SILICON EPIT A X IA L PLA N A R TYPE HN1D01F Unit in mm U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • Small Package Low Forward Voltage : V f 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	PDF	HN1D01F HN1D01F cd3m
Untitled Abstract: No abstract text available Text: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance	OCR Scan	PDF	HN1D01FU 961001EAA2'
m1261 Abstract: m 1261 HN1D01F Text: SILICON EPITAXIAL PLANAR TYPE HN1D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in m m h 0.2 -0 .3 . Small Package + 0.2 1 .6 - 0.1 . Low Forward Voltage : Vp=0.92V Typ. . Fast Reverse Recovery Time : trr= l .6 n s ( T y p .) . Small Total Capacitance	OCR Scan	PDF	HN1D01F 100mA m1261 m 1261 HN1D01F
Untitled Abstract: No abstract text available Text: TOSHIBA HN1D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HNinniF ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + • Small Package • Low Forward Voltage • Fast Reverse RecoveryTime : • Small Total Capacitance 2 .8 + : Vp 3 = 0.92V (Typ.) 1. 6	OCR Scan	PDF	HN1D01F
e50e Abstract: HN1D01FU MARKING TE US6 Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • Small Package • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance : Vp (3) = 0.92V (Typ.)	OCR Scan	PDF	HN1D01FU N1D01 961001EAA2' e50e HN1D01FU MARKING TE US6
Untitled Abstract: No abstract text available Text: TO SHIBA HN1D01F T O S H IB A D IO D E SILICON EPIT A X IA L PLA N A R TYPE HN1D01F U LTRA HIGH SPEED SW IT C H IN G A PPLIC A T IO N . U nit in mm + 0.2 • Small Package • Low Forward Voltage VF 3 = 0.92V (Typ.) • Fast Reverse Recovery Time trr= 1.6ns (Typ.)	OCR Scan	PDF	HN1D01F

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HN1D01F Price and Stock

Toshiba America Electronic Components HN1D01FU,LF(T

Toshiba America Electronic Components HN1D01F(TE85L,F)

Toshiba America Electronic Components HN1D01FE(TE85L,F)

Toshiba America Electronic Components HN1D01FU(T5L,F,T)

Toshiba America Electronic Components HN1D01FU,LF(B

HN1D01F Datasheets (13)

HN1D01F Datasheets Context Search

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HN1D01F

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HN1D01FU

HN1D01F

HN1D01F

HN1D01FE

HN1D01FU

HN1D01F

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HN1D01FE

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HN1D01FU

HN1D01F

4558 dd

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diode n1d

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HN1D01F

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m1261

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e50e

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